5秒后页面跳转
FLL21E045IY PDF预览

FLL21E045IY

更新时间: 2024-01-30 10:47:00
品牌 Logo 应用领域
EUDYNA /
页数 文件大小 规格书
6页 306K
描述
L,S-band High Power GaAs FET

FLL21E045IY 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76其他特性:HIGH RELIABILITY
配置:SINGLE最小漏源击穿电压:28 V
FET 技术:JUNCTION最高频带:S BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2工作模式:DEPLETION MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

FLL21E045IY 数据手册

 浏览型号FLL21E045IY的Datasheet PDF文件第2页浏览型号FLL21E045IY的Datasheet PDF文件第3页浏览型号FLL21E045IY的Datasheet PDF文件第4页浏览型号FLL21E045IY的Datasheet PDF文件第5页浏览型号FLL21E045IY的Datasheet PDF文件第6页 
FLL21E045IY  
L,S-band High Power GaAs FET  
FEATURES  
High Voltage Operation (VDS=28V) GaAs FET  
High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.)  
Broad Frequency Range : 2110 to 2170MHz  
High Reliability  
DESCRIPTION  
The FLL21E045IY is a high power GaAs FET that offers high efficiency,  
ease of matching, greater consistency and broad bandwidth for high  
power L-band amplifiers. This device is targeted for high voltage, low  
current operation in digitally modulated base station amplifiers. This  
product is ideally suited for W-CDMA and Multi-carrier PCS base station  
amplifiers while offering high gain, long term reliability and ease of use.  
ABSOLUTE MAXIMUM RATING  
Rating  
Item  
Symbol  
Condition  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
VDS  
VGS  
PT  
Tstg  
Tch  
32  
-3  
92  
V
V
W
oC  
oC  
o
C
T =25 C  
(Case Temperature)  
-
-
65 to +175  
200  
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC)  
Limit  
Item  
Symbol  
Condition  
Unit  
DC Input Voltage  
VDS  
IGF  
IGR  
Tch  
<28  
<176  
>-15.9  
155  
V
R =2  
Forward Gate Current  
Reverse Gate Current  
Channel Temperature  
mA  
mA  
oC  
G
R =2  
G
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)  
Limit  
Min. Typ. Max.  
Item  
Symbol  
Condition  
Unit  
Pinch-Off Voltage  
VP  
VDS=5V, IDS=75.4mA  
-0.1  
-5  
-
14.5 15.5  
-
-0.2  
-
-33  
-0.5  
V
V
dBc  
dB  
%
Gate-Source Breakdown Voltage  
3rd Order Intermodulation Distortion  
Power Gain  
VGSO IGS=-754uA  
IM3  
GP  
-
-30  
-
-
-
1.9  
VDS=28V  
DS(DC)=500mA  
I
Drain Efficiency  
26  
-35  
1.7  
η
Pout=40dBm(Avg.)  
D
Note 1  
Adjacent Channel Leakage Power Ratio  
ACLR  
Rth  
-
-
dBc  
oC/W  
Themal Resistance  
Channel to Case  
Note 1 : IM3, ACLR and Gain test conditions as follows  
IM3 & Gain : f0=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-0) BS-1 64ch non clipping modulation measured over 3.84MHz at f0-15MHz and f1+15MHz.  
ACLR : f0=2.1325GHz W-CDMA (3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at f0+/-5MHz  
ESD  
CLASS III  
2000V ~  
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k  
)
CASE STYLE : IY  
Edition 1.1  
June 2004  
1

与FLL21E045IY相关器件

型号 品牌 描述 获取价格 数据表
FLL21E060IY EUDYNA L,S-band High Power GaAs FET

获取价格

FLL21E090IK EUDYNA High Voltage - High Power GaAs FET

获取价格

FLL21E090IY EUDYNA L,S-band High Power GaAs FET

获取价格

FLL21E135IX EUDYNA L,S-band High Power GaAs FET

获取价格

FLL21E180IU EUDYNA High Voltage - High Power GaAs FET

获取价格

FLL2400IU-2C FUJITSU L-Band High Power GaAs FET

获取价格