FLL21E045IY
L,S-band High Power GaAs FET
FEATURES
・High Voltage Operation (VDS=28V) GaAs FET
・High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.)
・Broad Frequency Range : 2110 to 2170MHz
・High Reliability
DESCRIPTION
The FLL21E045IY is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is targeted for high voltage, low
current operation in digitally modulated base station amplifiers. This
product is ideally suited for W-CDMA and Multi-carrier PCS base station
amplifiers while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATING
Rating
Item
Symbol
Condition
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
Tstg
Tch
32
-3
92
V
V
W
oC
oC
o
C
T =25 C
(Case Temperature)
-
-
65 to +175
200
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC)
Limit
Item
Symbol
Condition
Unit
DC Input Voltage
VDS
IGF
IGR
Tch
<28
<176
>-15.9
155
V
R =2
Ω
Forward Gate Current
Reverse Gate Current
Channel Temperature
mA
mA
oC
G
R =2
G
Ω
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Limit
Min. Typ. Max.
Item
Symbol
Condition
Unit
Pinch-Off Voltage
VP
VDS=5V, IDS=75.4mA
-0.1
-5
-
14.5 15.5
-
-0.2
-
-33
-0.5
V
V
dBc
dB
%
Gate-Source Breakdown Voltage
3rd Order Intermodulation Distortion
Power Gain
VGSO IGS=-754uA
IM3
GP
-
-30
-
-
-
1.9
VDS=28V
DS(DC)=500mA
I
Drain Efficiency
26
-35
1.7
η
Pout=40dBm(Avg.)
D
Note 1
Adjacent Channel Leakage Power Ratio
ACLR
Rth
-
-
dBc
oC/W
Themal Resistance
Channel to Case
Note 1 : IM3, ACLR and Gain test conditions as follows
IM3 & Gain : f0=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-0) BS-1 64ch non clipping modulation measured over 3.84MHz at f0-15MHz and f1+15MHz.
ACLR : f0=2.1325GHz W-CDMA (3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at f0+/-5MHz
ESD
CLASS III
2000V ~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
Ω
CASE STYLE : IY
Edition 1.1
June 2004
1