是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Contact Manufacturer | 零件包装代码: | DIE |
包装说明: | UNCASED CHIP, R-XUUC-N4 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.34 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 配置: | SINGLE |
最小漏源击穿电压: | 15 V | FET 技术: | HIGH ELECTRON MOBILITY |
最高频带: | KU BAND | JESD-30 代码: | R-XUUC-N4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DEPLETION MODE | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | UNCASED CHIP |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FLK017XP | EUDYNA | GaAs FET & HEMT Chips |
获取价格 |
|
FLK022WG | FUJITSU | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, |
获取价格 |
|
FLK022XP | FUJITSU | RF Small Signal Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, High Electr |
获取价格 |
|
FLK022XV | FUJITSU | RF Small Signal Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, High Electr |
获取价格 |
|
FLK027WG | EUDYNA | X, Ku Band Power GaAs FET |
获取价格 |
|
FLK027XP | EUDYNA | GaAs FET & HEMT Chips |
获取价格 |