1,550nm MI DFB Laser
with Integrated Wavelength Locker
FLD5F20CE-E
FEATURES
• 10Gb/s Modulator Integrated DFB Laser Diode Module
• Wavelength: ITU-T grid W9180 (1563.05nm) thru W9600 (1529.55nm)
• 1600 ps/nm Dispersion
• Compact package with GPO connector
• Built-in Optical Isolator, Ternary PIN-PD for monitor, thermistor and
thermoelectric cooler
• Wavelength locker integrated MI-DFB
APPLICATION
This MI DFB laser is intended for long reach applications (80km)
at 10Gb/s.
DESCRIPTION
The Modulator Integrated DFB Laser (MI DFB Laser) with Wavelength Locker has an
electro-absorption modulator monolithically integrated with a conventional Distributed
Feed-Back (DFB) laser. The modulation voltage is applied to the modulator section while the
laser section operates CW allowing extremely low wavelength chirping. Extinction ratios of
more that 10dB can be achieved with 2.6 Vp-p modulation. The MI laser is installed in a but-
terfly type package. The tuned wavelength can be locked onto the desired ITU-T grid channel
via use of the included fabry-perot etalon. The module incorporates a highly stable optical
coupling system. The module includes an optical isolator, monitor photodiode, thermistor and
a thermo-electric cooler.
ABSOLUTE MAXIMUM RATINGS (T =25°C, unless otherwise specified)
op
Rating
Parameter
Symbol
Condition
Unit
Min.
Max.
T
Operating Case Temperature
Storage Temperature
-
-
-20
-40
+70
+85
°C
°C
op
T
stg
P
f
Optical Output Power
Laser Forward Current
CW
CW
-
-
5
mW
mA
I
150
F
V
R
Laser Reverse Voltage
CW
CW
-
-
-5
-
2
+1
1
V
V
V
Modulator Forward Voltage
Photodiode Forward Current
Photodiode Reverse Voltage
m
-
mA
V
V
-
-
-
10
+5
-
DR
Cooling
Heating
Cooling
Heating
TEC Voltage
TEC Current
V
c
V
A
-5
-
+2.5
-
I
c
-0.6
Tth
-
ATC Operation
-20
-
+70
10
°C
Thermistor Temperature
Lead Soldering Time
260°C
sec
Edition 1.1
July 2004
1