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FLC107WG PDF预览

FLC107WG

更新时间: 2024-01-14 12:56:27
品牌 Logo 应用领域
EUDYNA 晶体晶体管局域网
页数 文件大小 规格书
4页 91K
描述
C-Band Power GaAs FET

FLC107WG 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
其他特性:HIGH RELIABILITY外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:15 V
FET 技术:JUNCTION最高频带:C BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2工作模式:DEPLETION MODE
最高工作温度:175 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:7.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

FLC107WG 数据手册

 浏览型号FLC107WG的Datasheet PDF文件第2页浏览型号FLC107WG的Datasheet PDF文件第3页浏览型号FLC107WG的Datasheet PDF文件第4页 
FLC107WG  
C-Band Power GaAs FET  
FEATURES  
• High Output Power: P  
= 30.0dBm(Typ.)  
1dB  
• High Gain: G  
= 8.0dB(Typ.)  
= 36%(Typ.)  
1dB  
• High PAE: η  
add  
• Proven Reliability  
• Hermetic Metal/Ceramic Package  
DESCRIPTION  
The FLC107WG is a power GaAs FET that is designed for general  
purpose applications in the C-Band frequency range as it provides  
superior power, gain, and efficiency.  
Fujitsu’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
15  
-5  
V
V
DS  
GS  
T = 25°C  
c
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
P
7.5  
-65 to +175  
175  
W
°C  
°C  
T
T
stg  
T
ch  
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed +10 volts.  
DS  
2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with  
gate resistance of 500.  
3. The operating channel temperature (T ) should not exceed 145°C.  
ch  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limit  
Typ.  
Item  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
V
V
V
I
= 5V, V  
= 0V  
GS  
Saturated Drain Current  
Transconductance  
I
-
400  
600  
-
mA  
DS  
DS  
DS  
DSS  
g
= 5V, I  
= 250mA  
= 20mA  
200  
m
-
mS  
V
DS  
Pinch-off Voltage  
V
= 5V, I  
DS  
-1.0  
-2.0 -3.5  
p
Gate Source Breakdown Voltage  
V
-
-
= -20µA  
-5  
V
GSO  
GS  
Output Power at 1dB G.C.P.  
P
1dB  
28.5 30.0  
-
dBm  
V
= 10V,  
DS  
I
= 0.6 I  
DS  
DSS (Typ.),  
-
Power Gain at 1dB G.C.P.  
Power-added Efficiency  
G
7.0  
8.0  
dB  
1dB  
f = 8 GHz  
η
add  
-
-
-
36  
16  
%
R
Thermal Resistance  
Channel to Case  
20  
°C/W  
th  
G.C.P.: Gain Compression Point  
CASE STYLE: WG  
Edition 1.1  
July 1999  
1

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