Datasheet > FLC057WG

FLC057WG

更新时间： 2024-02-11 00:08:59

品牌	Logo	应用领域
EUDYNA		晶体晶体管局域网
页数	文件大小	规格书
4页	91K
描述
C-Band Power GaAs FET

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

FLC057WG 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Contact Manufacturer	包装说明：	FLANGE MOUNT, R-CDFM-F2
针数：	2	Reach Compliance Code：	unknown
风险等级：	5.36	Is Samacsys：	N
其他特性：	HIGH RELIABILITY	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	15 V
FET 技术：	JUNCTION	最高频带：	C BAND
JESD-30 代码：	R-CDFM-F2	元件数量：	1
端子数量：	2	工作模式：	DEPLETION MODE
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管元件材料：	GALLIUM ARSENIDE	Base Number Matches：	1

FLC057WG 数据手册

FLC057WG

C-Band Power GaAs FET

FEATURES

• High Output Power: P

= 27.0dBm(Typ.)

1dB

• High Gain: G

= 9.0dB(Typ.)

= 38%(Typ.)

1dB

• High PAE: η

add

• Proven Reliability

• Hermetic Metal/Ceramic Package

DESCRIPTION

The FLC057WG is a power GaAs FET that is designed for general

purpose applications in the C-Band frequency range as it provides

superior power, gain, and efficiency.

Fujitsu’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Item

Symbol

Condition

Unit

Rating

Drain-Source Voltage

Gate-Source Voltage

-5

T = 25°C

Total Power Dissipation

Storage Temperature

Channel Temperature

3.75

-65 to +175

175

°C

stg

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

1. The drain-source operating voltage (V ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 4.4 and -0.25 mA respectively with

gate resistance of 1000Ω.

3. The operating channel temperature (T ) should not exceed 145°C.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Limit

Typ.

Item

Symbol

Test Conditions

Unit

Min.

Max.

= 5V, V

= 0V

Saturated Drain Current

Transconductance

200

300

DSS

= 5V, I

= 125mA

=10mA

100

Pinch-off Voltage

= 5V, I

-1.0

-2.0 -3.5

Gate Source Breakdown Voltage

= -10µA

-5

GSO

Output Power at 1dB G.C.P.

1dB

25.5 27.0

dBm

= 10V

≈ 0.6 I

DSS (Typ.),

Power Gain at 1dB G.C.P.

Power-added Efficiency

8.0

9.0

1dB

f = 8 GHz

add

Thermal Resistance

Channel to Case

°C/W

G.C.P.: Gain Compression Point

CASE STYLE: WG

Edition 1.1

July 1999

12 3 4

下载PDF

与FLC057WG相关器件

型号	品牌	描述	获取价格	数据表
FLC-05-K	MSYSTEM	Space-saving Plug-in Signal Conditioners F-UNIT	获取价格
FLC-05-K/Q	MSYSTEM	Space-saving Plug-in Signal Conditioners F-UNIT	获取价格
FLC-05-L	MSYSTEM	Space-saving Plug-in Signal Conditioners F-UNIT	获取价格
FLC-05-L/Q	MSYSTEM	Space-saving Plug-in Signal Conditioners F-UNIT	获取价格
FLC-05-P	MSYSTEM	Space-saving Plug-in Signal Conditioners F-UNIT	获取价格
FLC-05-P/Q	MSYSTEM	Space-saving Plug-in Signal Conditioners F-UNIT	获取价格