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FHX76LP PDF预览

FHX76LP

更新时间: 2024-02-02 21:56:19
品牌 Logo 应用领域
EUDYNA 晶体晶体管
页数 文件大小 规格书
5页 87K
描述
Super Low Noise HEMT

FHX76LP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer包装说明:DISK BUTTON, O-CRDB-F4
针数:4Reach Compliance Code:unknown
风险等级:5.35Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:3.5 V
FET 技术:HIGH ELECTRON MOBILITY最高频带:X BAND
JESD-30 代码:O-CRDB-F4元件数量:1
端子数量:4工作模式:DEPLETION MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最小功率增益 (Gp):12 dB
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:RADIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

FHX76LP 数据手册

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FHX76LP  
Super Low Noise HEMT  
FEATURES  
• Low Noise Figure: NF=0.40dB (Typ.)@f=12GHz  
• High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz  
• High Reliability  
• Small Size SMT Package  
Tape and Reel Packaging Available  
DESCRIPTION  
The FHX76LP is a low noise SuperHEMTTMproduct designed for DBS  
applications. This device uses a small ceramic package that is optimized  
for high volume cost driven requirements.  
Eudyna’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C)  
Parameter  
Symbol  
Unit  
Condition  
Rating  
3.5  
Drain-Source Voltage  
Gate-Source Voltage  
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
V
V
V
V
DS  
-3.0  
GS  
P
Note  
180  
mW  
°C  
°C  
t
T
-65 to 150  
150  
STG  
T
CH  
Note: Mounted on Al O board (30 x 30 x 0.65mm)  
2
3
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 2 volts.  
DS  
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with  
gate resistance of 4000.  
3. The operating channel temperature (T ) should not exceed 80°C.  
ch  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limits  
Typ.  
Item  
Symbol  
Conditions  
Unit  
Min.  
10  
Max.  
60  
-
V
V
= 2V, V =0V  
I
mA  
mS  
V
Saturated Drain Current  
Transconductance  
30  
50  
DS  
GS  
DSS  
= 2V, I =10mA  
gm  
35  
DS  
DS  
Pinch-Off Voltage  
V
V
I
= 2V, I =1mA  
-0.1  
-3.0  
-
-0.7  
-1.5  
p
DS  
DS  
V
GSO  
= -10µA  
Gate-Source Breakdown Voltage  
Noise Figure  
-
-
V
dB  
GS  
V
DS  
= 2V,  
= 10mA,  
NF  
0.50  
-
0.40  
13.5  
300  
I
DS  
Gas  
Associated Gain  
Thermal Resistance  
CASE STYLES: LP  
12.0  
-
dB  
f=12GHz  
R
Channel to Case  
400  
°C/W  
th  
Note: RF parameters for LP devices are measured on a sample basis as follows:  
Lot qty.  
Sample qty.  
125  
Accept/Reject  
(0,1)  
1200  
1201  
3201  
or  
to  
to  
less  
3200  
10000  
over  
200  
315  
500  
(0,1)  
(1,2)  
(1,2)  
10001 or  
Edition 1.1  
August 2004  
1

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