生命周期: | Obsolete | 包装说明: | UNCASED CHIP, R-XUUC-N |
Reach Compliance Code: | compliant | 风险等级: | 5.33 |
其他特性: | LOW NOISE, HIGH RELIABILITY | 配置: | SINGLE |
最小漏源击穿电压: | 3.5 V | FET 技术: | HIGH ELECTRON MOBILITY |
最高频带: | KU BAND | JESD-30 代码: | R-XUUC-N |
元件数量: | 1 | 工作模式: | DEPLETION MODE |
最高工作温度: | 175 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | UNCASED CHIP |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 0.18 W |
最小功率增益 (Gp): | 11 dB | 认证状态: | Not Qualified |
子类别: | FET RF Small Signal | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | UPPER |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FHX14LP | FUJITSU | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, High Elec |
获取价格 |
|
FHX14X | EUDYNA | GaAs FET & HEMT Chips |
获取价格 |
|
FHX34X | FUJITSU | RF Small Signal Field-Effect Transistor, KU Band, Silicon, N-Channel, High Electron Mobili |
获取价格 |
|
FHX35LG | FUJITSU | Low Noise HEMT |
获取价格 |
|
FHX35LG/002 | FUJITSU | Low Noise HEMT |
获取价格 |
|
FHX35LP | FUJITSU | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, High Elec |
获取价格 |