Eudyna GaN-HEMT 30W
ES/EGN26A030MK
Preliminary
High Voltage - High Power GaN-HEMT
FEATURES
・
High Voltage Operation : VDS=50V
・
High Power : 46.5dBm (typ.) @ P3dB
・High Efficiency: 60%(typ.) @ P3dB
・Linear Gain : 15.0dB(typ.) @ f=2.6GHz
・Proven Reliability
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
consistency and broad bandwidth for high power L-band amplifiers with 50V
operation, and gives you higher gain.
This device target applications are low current and wide band applications for
high voltage.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Condition
Rating
120
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
V
DS
V
GSꢀꢀꢀꢀꢀ Tc=25oCꢀꢀꢀꢀ
ꢀꢀ -5
75
V
Pt
W
Tstg
-65 to +175
250
oC
oC
T
ch
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC)
Item
DC Input Voltage
Symbol
Condition
Limit
50
Unit
V
V
DS
GF
GR
ch
Forward Gate Current
Reverse Gate Current
Channel Temperature
I
RG
=15 Ω
<TBD
>-2.2
200
mA
mA
oC
I
RG=15 Ω
T
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Symbol Condition
Limit
min. Typ. Max.
Unit
Pinch-Off Voltage
V
p
V
DS=50V IDS=11mA -1.0
-2.0
-350
46.5
60
-3.5
V
V
Gate-Drain Breakdown Voltage
3dB Gain Compression Power
Drain Efficiency
VGDO
I
GS=- 5.6 mA
-
TBD
-
-
-
P3dB
V
DS=50V
ꢀ dBm
%
η
d
I
DS(DC)=200mA
-
Linear Gain
G
L
f=2.6GHz
TBD
-
15.0
2.5
-
dB
oC/W
Thermal Resistance
Rth
Channel to Case
3.0
Edition 1.2
Dec. 2005
1