Preliminary
ES/EMM5832VU
K-Band Power Amplifier MMIC
FEATURES
・High Output Power: Pout=31.0dBm (typ.)
・High Linear Gain: GL=23.0dB (typ.)
・Broad Band: 21.2~26.5GHz
・Impedance Matched Zin/Zout=50Ω
・Small Hermetic Metal-Ceramic SMT Package(VU)
Device
DESCRIPTION
The EMM5832VU is a MMIC amplifier that contains a four-stage
amplifier, internally matched, for standard communications band in the
21.2 to 26.5GHz frequency range.
Eudyna Devices’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
の写真
ABSOLUTE MAXIMUM RATING
Rating
Item
Drain-Source Voltage
Gate-Source Voltage
Input Power
Symbol
Unit
V
VDD
10
VGG
Pin
-3
22
V
dBm
℃
-55 to +125
Tstg
Storage Temperature
RECOMMENDED OPERATING CONDITIONS
Condition
Item
Drain-Source Voltage
Input Power
Symbol
Unit
V
VDD
Pin
≦7
≦
12
dBm
℃
-40 to +85
TC
Operating Case Temperature
ELECTRICAL CHARACTERISTICS (Case Temperature Ta=25℃)
Limits
Min. Typ. Max.
Item
Symbol
Test Conditions
Unit
VDD=+6V
RF Frequency Range
f
21.2
-
26.5
GHz
dBm
dB
P1dB
G1dB
Nadd
IDDRF
IM3
IDD(DC)=800mA typ.
ZS=ZL=50ohm
Output Power at 1dB G.C.P.
TBD
31
21
20
-
TBD
-
Power Gain at 1dB G.C.P.
TBD
Power-added Efficiency at 1dB G.C.P.
Drain Current at 1dB G.C.P.
-
%
-
1000 TBD
mA
dBc
dB
3rd. Order Intermodulation Distortion *
Input Return Loss (at Pin=-20dBm)
Output Return Loss (at Pin=-20dBm)
* df=+10MHz
TBD
33
-8
-8
-
-
-
RLIN
Po=20dBm S.C.L
-
-
RLOUT
dB
G.C.P. : Gain Compression Point
S.C.L. : Single Carrier Level
Class 0
~199V
ESD
Note : Based on EIAJ ED4701 C-111A(C=100pF, R=1.5kohm)
VU
CASE STYLE
Edition 1.0
Aug. 2005
1