Datasheet > EMM5068VU

EMM5068VU

更新时间： 2024-01-02 08:06:31

品牌	Logo	应用领域
EUDYNA		放大器射频微波功率放大器
页数	文件大小	规格书
16页	222K
描述
X-Band Power Amplifier MMIC

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技术参数
数据手册

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EMM5068VU 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.12	其他特性：	HIGH RELIABILITY
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	21 dB	最大输入功率 (CW)：	26 dBm
最大工作频率：	13300 MHz	最小工作频率：	9500 MHz
最高工作温度：	85 °C	最低工作温度：	-40 °C
射频/微波设备类型：	WIDE BAND MEDIUM POWER	Base Number Matches：	1

EMM5068VU 数据手册

Preliminary

ES/EMM5068VU

X-Band Power Amplifier MMIC

FEATURES

・High Output Power: Pout=33.0dBm (typ.)

・High Linear Gain: GL=26.0dB (typ.)

・Broad Band: 9.5-13.3GHz

・Impedance Matched Zin/Zout=50Ω

・Small Hermetic Metal-Ceramic SMT Package(VU)

Device

DESCRIPTION

The EMM5068VU is a MMIC amplifier that contains a three-stages

amplifier, internally matched, for standard communications band in the

9.5 to 13.3GHz frequency range.

Eudyna Devices’s stringent Quality Assurance Program assures the

highest reliability and consistent performance.

の写真

ABSOLUTE MAXIMUM RATING

Item

Drain-Source Voltage

Gate-Source Voltage

Input Power

Symbol

V_DD

V_GG

P_in

Unit

Rating

-3

dBm

^oC

Channel Temperature

Storage Temperature

T_ch

+175

T_stg

-55 to +125

RECOMMENDED OPERATING CONDITIONS

Item

Drain-Source Voltage

Drain-Source Current

Input Power

Symbol

Unit

Conditions

V_DD

I_DD

dBm

^oC

1300

P_in

<=12

Operating Case Temperature

ELECTRICAL CHARACTERISTICS (Case Temperature Ta=25^oC)

Top

-40 to +85

Unit

Limits

Min. Typ. Max.

Item

Symbol

Test Conditions

V_DD=6V

9.5

31^*1

28^*2

22^*1

13.3

Frequency Range

GHz

dBm

I_DD=1300mA

33^*1

30^*2

25^*1

P_1dB

Output Power at 1dB G.C.P.

Z_s=Z_l=50ohm

G_1dB

Power Gain at 1dB G.C.P.

*1:f=9.5~11.7GHz

*2:f=11.7~13.3GHz

20^*2

23^*2

21^*1

Power-added Efficiency at 1dB G.C.P.

η_add

13^*2

Third Order Intermodulation*

Drain Current at 1dB G.C.P.

IM₃

I_DD

*3:∆f=10MHz ,

2-Tone Test,

-37^*3-40^*3

dBc

1700^*12400^*1

1500^*22400^*2

P_out=20dBm S.C.L.

Input Return Loss (at Pin=-20dBm)

Output Return Loss (at Pin=-20dBm)

RL_in

-8

RL_out

G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level

ESD

Class 0

~ 199V

Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)

CASE STYLE

Edition 1.2

June 2005

12 3 4 5 6 7...16

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