Datasheet > EMC21L1004GN

EMC21L1004GN

更新时间： 2024-02-07 08:00:43

品牌	Logo	应用领域
EUDYNA		放大器射频微波功率放大器高功率电源
页数	文件大小	规格书
4页	193K
描述
High Voltage - High Power GaN-HEMT Power Amplifier Module

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技术参数
数据手册

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EMC21L1004GN 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.28	其他特性：	HIGH RELIABILITY
构造：	COMPONENT	增益：	26 dB
最大输入功率 (CW)：	10 dBm	最大工作频率：	2170 MHz
最小工作频率：	2110 MHz	最高工作温度：	85 °C
最低工作温度：	-20 °C	射频/微波设备类型：	NARROW BAND HIGH POWER
最大电压驻波比：	2.5

EMC21L1004GN 数据手册

Eudyna GaN-HEMT 10W

EMC21L1004GN

Preliminary

High Voltage - High Power GaN-HEMT

Power Amplifier Module

FEATURES

・High Voltage Operation : VDS=50V

・High Gain: 28.5dB(typ.) at Pout=22dBm(Avg.)

・Broad Frequency Range : 2110 to 2170MHz

・Proven Reliability

・Small and Low Cost Metal Base Package

DESCRIPTION

The EMC21L1004GN is a high-gain and wide-band 2-stage HIC

amplifier module with 50V operation.

This module is targeted for high voltage, low current operation in digitally

modulated base station. This product is ideally suited not only for W-

CDMA base station amplifiers but also other HPA while offering ease for

use.

ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25^oC)

Item

Symbol

Rating

Unit

dd1,2

DC Input Voltage (Drain)

DC Input Voltage (Gate)

Input Power

0 to +52

-7 to 0

gg1,2

+20

dBm

^oC

stg

Storage Temperature

Operating Case Temperature

-40 to +100

-20 to +85

RECOMMENDED OPERATING CONDITION (Case Temperature Tc= 25^oC)

Item

Symbol

Condition

Unit

dd1,2

DC Input Voltage (Drain)

DC Input Voltage (Gate)

Input Power

-3

gg1,2

<10

dBm

ELECTRICAL CHARACTERISTICS (Case Temperature Tc= 25^oC)

Limit

Item

Symbol

Condition

Unit

Min. Typ. Max.

2.11

Frequency

2.17

31.0

0.5

GHz

Linear Gain

Gain Deviation

Input VSWR

26.0

28.5

0.2

dBp_p

dd1,2=50V

d-Ga

gg1,2=-3.0V

in=-10dBm

VSWRi

1.5:1 2.5:1

dd1,2=50V

DC Input Current

Idd(DC

)

210

6.0

250

gg1,2=-3.0V

gg(DC)

15.0

Without RF

dd1,2=50V

3rd Order Intermodulation

Distortion Ratio

-47.0 -45.0

200 250

dBc

gg1,2=-3.0V

out=22dBm(Avg.)

DC Input Current

Idd

(Note 1)

Note 1 : IM

and Idd test condition as follows:

&Idd : f =2.135GHz, f =2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch

67% clipping modulation(Peak/Avg.=8.5dB@0.01% probability(CCDF))

measured over 3.84MHz at f0-10MHz and f1+10MHz.

Note 2 : The RF parameters are measured with test fixture.

Edition 1.0

June 2005

12 3 4

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