Eudyna GaN-HEMT 180W
ES/EGN26A180IV
Preliminary
High Voltage - High Power GaN-HEMT
FEATURES
・
High Voltage Operation : VDS=50V
・
High Power : 53.0dBm (typ.) @ P3dB
・High Efficiency: 55%(typ.) @ P3dB
・Linear Gain : 14.0dB(typ.) @ f=2.6GHz
・Proven Reliability
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
consistency and broad bandwidth for high power L-band amplifiers with 50V
operation, and gives you higher gain.
This device target applications are low current and wide band applications for
high voltage.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Condition
=25oC
Rating
120
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
T
c
-5
V
Pt
281.25
-65 to +175
250
W
Tstg
oC
oC
T
ch
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC)
Item
Symbol
Condition
Limit
50
Unit
V
DC Input Voltage
V
DS
GF
GR
ch
Forward Gate Current
Reverse Gate Current
Channel Temperature
I
RG
=2 Ω
<TBD
>-7.2
200
mA
mA
oC
I
RG
=2 Ω
T
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Symbol Condition
Limit
min. Typ. Max.
Unit
Pinch-Off Voltage
V
p
V
DS=50V IDS=72mA -1.0
-2.0
-350
53.0
55
-3.5
V
V
Gate-Drain Breakdown Voltage
3dB Gain Compression Power
Drain Efficiency
VGDO
I
GS=- 36mA
-
TBD
-
-
-
-
-
P3dB
V
DS=50V
ꢀ dBm
%
η
d
IDS(DC)=1000mA
Linear Gain
G
L
f=2.6GHz
TBD
-
14.0
0.65
dB
Thermal Resistance
Rth
Channel to Case
0.8ꢀ oC/W
Edition 1.2
Dec. 2005
1