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EGN21A180IV PDF预览

EGN21A180IV

更新时间: 2024-02-05 04:20:09
品牌 Logo 应用领域
EUDYNA /
页数 文件大小 规格书
4页 235K
描述
High Voltage - High Power GaN-HEMT

EGN21A180IV 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.17Is Samacsys:N
构造:COMPONENT增益:15 dB
最大工作频率:2200 MHz最小工作频率:2100 MHz
射频/微波设备类型:NARROW BAND HIGH POWERBase Number Matches:1

EGN21A180IV 数据手册

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Eudyna GaN-HEMT 180W  
EGN21A180IV  
Preliminary  
High Voltage - High Power GaN-HEMT  
FEATURES  
High Voltage Operation : VDS=50V  
High Gain: 15dB(typ.) at Pout=45dBm(Avg.)  
High Efficiency: 32%(typ.) at Pout=45dBm(Avg.)  
Broad Frequency Range : 2100 to 2200MHz  
Proven Reliability  
DESCRIPTION  
The EGN21A180IV is a 180 Watt GaN-HEMT that offers high efficiency,  
high gain, ease of matching, greater consistency and broad bandwidth  
for high power L-band amplifiers with 50V operation. This device is  
targeted for high voltage, low current operation in digitally modulated  
base station applications - ideally suited for W-CDMA base station  
amplifiers and other HPA designs while offering ease of use.  
ABSOLUTE MAXIMUM RATINGS  
Item  
Symbol  
Condition  
Rating  
120  
-5  
321  
-65 to +175  
250  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
V
V
P
T
DS  
GS  
T
c
=25oC  
V
t
W
stg  
oC  
oC  
T
ch  
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC)  
Item  
Symbol  
Condition  
Limit  
Unit  
DC Input Voltage  
Forward Gate Current  
Reverse Gate Current  
Channel Temperature  
V
DS  
GF  
GR  
ch  
50  
V
I
I
R
G
=2 Ω  
<38.8  
>-14.4  
200  
mA  
mA  
oC  
RG  
=2 Ω  
T
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)  
Item  
Symbol Condition  
Limit  
Min. Typ. Max.  
Unit  
Pinch-Off Voltage  
Vp  
VDS=50V IDS=72mA -1.0  
-2.0  
-350  
-32  
-3.5  
-
-
V
V
dBc  
dB  
%
Gate-Drain Breakdown Voltage  
3rd Order Inter modulation Distortion  
Power Gain  
V
IM  
G
GDO  
I
V
I
GS=- 36 mA  
DS=50V  
DS(DC)=1.0A  
-
-
3
p
14.0  
-
15.0  
32  
-
-
Drain Efficiency  
η
d
P
out=45dBm(Avg.)  
Note 1  
Channel to Case  
Thermal Resistance  
R
th  
-
0.55  
0.7  
oC/W  
Note 1 : IM3 and Gain test condition as follows:  
IM3 & Gain : fo=2.135GHz, f1=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch  
67% clipping modulation(Peak/Avg. = 8.5dB@0.01% Probability(CCDF)) measured  
over 3.84MHz at fo-10MHz and fI+10MHz.  
Edition 1.0  
June 2005  
1

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