Datasheet > EGN21A045IV

EGN21A045IV

更新时间： 2024-01-16 21:42:15

品牌	Logo	应用领域
EUDYNA		射频微波高功率电源
页数	文件大小	规格书
4页	231K
描述
High Voltage - High Power GaN-HEMT

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技术参数
数据手册

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EGN21A045IV 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.17	Is Samacsys：	N
构造：	COMPONENT	增益：	15 dB
最大工作频率：	2200 MHz	最小工作频率：	2100 MHz
射频/微波设备类型：	NARROW BAND HIGH POWER	Base Number Matches：	1

EGN21A045IV 数据手册

Eudyna GaN-HEMT 45W

EGN21A045IV

Preliminary

High Voltage - High Power GaN-HEMT

FEATURES

・High Voltage Operation : VDS=50V

・High Gain: 16dB(typ.) at Pout=39dBm(Avg.)

・High Efficiency: 35%(typ.) at Pout=39dBm(Avg.)

・Broad Frequency Range : 2100 to 2200MHz

・Proven Reliability

DESCRIPTION

The EGN21A045IV is a 45 Watt GaN-HEMT that offers high efficiency,

high gain, ease of matching, greater consistency and broad bandwidth

for high power L-band amplifiers with 50V operation. This device is

targeted for high voltage, low current operation in digitally modulated

base station applications - ideally suited for W-CDMA base station

amplifiers and other HPA designs while offering ease of use.

ABSOLUTE MAXIMUM RATINGS

Item

Symbol

Condition

Rating

120

-5

112

-65 to +175

250

Unit

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

=25^oCꢀꢀꢀꢀꢀ

stg

^oC

RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25^oC)

Item

Symbol

Condition

Limit

Unit

DC Input Voltage

Forward Gate Current

Reverse Gate Current

Channel Temperature

=10 Ω

<9.7

>-3.6

200

^oC

RG=10 Ω

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)

Item

Symbol Condition

Limit

Min. Typ. Max.

Unit

Pinch-Off Voltage

VDS=50V IDS=18mA -1.0

-2.0

-350

-32

-3.5

dBc

Gate-Drain Breakdown Voltage

3rd Order Inter modulation Distortion

Power Gain

GDO

GS=- 9.0 mA

DS=50V

DS(DC)=250mA

15.0

16.0

Drain Efficiency

out=39dBm(Avg.)

Note 1

Channel to Case

Thermal Resistance

1.8

2.0

^oC/W

Note 1 : IM3 and Gain test condition as follows:

IM3 & Gain : fo=2.135GHz, f1=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch

67% clipping modulation(Peak/Avg. = 8.5dB@0.01% Probability(CCDF)) measured

over 3.84MHz at fo-10MHz and fI+10MHz.

Edition 1.0

June 2005

12 3 4

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