Datasheet > EGN045MK

EGN045MK

更新时间： 2024-02-06 04:19:57

品牌	Logo	应用领域
EUDYNA		/
页数	文件大小	规格书
3页	210K
描述
High Voltage - High Power GaN-HEMT

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技术参数
数据手册

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EGN045MK 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.17	其他特性：	HIGH RELIABILITY
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	11 dB	最大工作频率：	2200 MHz
最小工作频率：	800 MHz	射频/微波设备类型：	WIDE BAND HIGH POWER
Base Number Matches：	1

EGN045MK 数据手册

Eudyna GaN-HEMT 45W

EGN045MK

Preliminary

High Voltage - High Power GaN-HEMT

FEATURES

・High Voltage Operation : VDS=50V

・High Power : 47.5dBm (typ.) @ P3dB

・High Efficiency: 60%(typ.) @ P3dB

・Linear Gain : 12dB(typ.) @ f=2200MHz

・Broad Frequency Range : 800 to 2200MHz

・Proven Reliability

DESCRIPTION

Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

consistency and broad bandwidth for high power L-band amplifiers with

50V operation, and gives you higher gain.

This device target applications are low current and wide band

applications for high voltage.

ABSOLUTE MAXIMUM RATINGS

Item

Symbol

Condition

Rating

120

-5

75.0

-65 to +175

250

Unit

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Tc=25^oC

stg

^oC

RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25^oC)

Item

Symbol

Condition

Limit

Unit

DC Input Voltage

Forward Gate Current

Reverse Gate Current

Channel Temperature

=10 Ω

<9.7

>-3.6

200

^oC

RG=10 Ω

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)

Item

Symbol Condition

Limit

Unit

min. Typ. Max.

Pinch-Off Voltage

VDS=50V IDS=18mA -1.0

-2.0

-350

47.5

-3.5

dBm

Gate-Drain Breakdown Voltage

3dB Gain Compression Power

Drain Efficiency

GDO

GS=- 9.0 mA

DS=50V

46.5

P3dB

IDS(DC)=250mA

Linear Gain

Thermal Resistance

f=2.2GHz

Channel to Case

11.0

12.0

2.0

^oC/W

Rth

3.0

Edition 1.0

June 2005

12 3

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