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EGN030MK PDF预览

EGN030MK

更新时间: 2024-02-05 21:51:32
品牌 Logo 应用领域
EUDYNA /
页数 文件大小 规格书
3页 193K
描述
High Voltage - High Power GaN-HEMT

EGN030MK 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-XDFM-F2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.27Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE
最小漏源击穿电压:120 VFET 技术:HIGH ELECTRON MOBILITY
最高频带:S BANDJESD-30 代码:R-XDFM-F2
元件数量:1端子数量:2
工作模式:DEPLETION MODE封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管元件材料:SILICON
Base Number Matches:1

EGN030MK 数据手册

 浏览型号EGN030MK的Datasheet PDF文件第2页浏览型号EGN030MK的Datasheet PDF文件第3页 
Eudyna GaN-HEMT 30W  
EGN030MK  
Preliminary  
High Voltage - High Power GaN-HEMT  
FEATURES  
High Voltage Operation : VDS=50V  
High Power : 46.5dBm (typ.) @ P3dB  
High Efficiency: 60%(typ.) @ P3dB  
Linear Gain : 12dB(typ.) @ f=2700MHz  
Broad Frequency Range : 800 to 2800MHz  
Proven Reliability  
DESCRIPTION  
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater  
consistency and broad bandwidth for high power L-band amplifiers wit
50V operation, and gives you higher gain.  
This device target applications are low current and wide band  
applications for high voltage.  
ABSOLUTE MAXIMUM RATINGS  
Item  
Symbol  
Condition  
Rating  
120  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
V
V
P
T
DS  
GS  
Tc=25oC  
-5  
V
t
56.25  
-65 to +175  
250  
W
stg  
oC  
oC  
T
ch  
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC)  
Item  
Symbol  
Condition  
Limit  
Unit  
DC Input Voltage  
Forward Gate Current  
Reverse Gate Current  
Channel Temperature  
V
DS  
GF  
GR  
ch  
50  
V
I
I
RG  
=15 Ω  
<6.1  
>-2.2  
200  
mA  
mA  
oC  
RG=15 Ω  
T
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)  
Item  
Symbol Condition  
Limit  
Unit  
min. Typ. Max.  
Pinch-Off Voltage  
Vp  
VDS=50V IDS=11mA -1.0  
-2.0  
-350  
46.5  
60  
-3.5  
V
V
dBm  
%
Gate-Drain Breakdown Voltage  
3dB Gain Compression Power  
Drain Efficiency  
V
GDO  
I
V
GS=- 5.6 mA  
DS=50V  
-
45.5  
-
-
-
-
P3dB  
η
d
IDS(DC)=200mA  
Linear Gain  
Thermal Resistance  
G
L
f=2.7GHz  
Channel to Case  
11.0  
-
12.0  
3.0  
-
dB  
oC/W  
Rth  
4.0  
Edition 1.0  
June 2005  
1

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