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EU2ZV4 PDF预览

EU2ZV4

更新时间: 2024-11-12 14:42:11
品牌 Logo 应用领域
三垦 - SANKEN 二极管
页数 文件大小 规格书
9页 172K
描述
Rectifier Diode, 1 Element, 1A, Silicon

EU2ZV4 技术参数

生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.63
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大反向恢复时间:0.4 µs表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

EU2ZV4 数据手册

 浏览型号EU2ZV4的Datasheet PDF文件第2页浏览型号EU2ZV4的Datasheet PDF文件第3页浏览型号EU2ZV4的Datasheet PDF文件第4页浏览型号EU2ZV4的Datasheet PDF文件第5页浏览型号EU2ZV4的Datasheet PDF文件第6页浏览型号EU2ZV4的Datasheet PDF文件第7页 
General-purpose Diodes  
Rectifier Diodes  
Surface-mount Type  
(Ta =25ºC)  
Electrical Characteristics  
(Ta =25ºC)  
Electrical Characteristics  
Absolute Maximum Ratings  
Absolute Maximum Ratings  
IF (AV) IFSM  
VF  
(V)  
IR  
(µA)  
VF  
(V)  
IR  
(µA)  
Fig.  
No.  
Fig.  
No.  
VRM  
(V)  
IF (AV) IFSM  
Condition  
Type No.  
VRM  
(V)  
Condition  
Type No.  
Tj  
Tstg  
(ºC)  
Tj  
Tstg  
(ºC)  
(A)  
(A)  
(A)  
(A)  
IF  
IF  
max  
max  
max  
max  
(A)  
(A)  
SFPM-52  
-54  
200  
400  
200  
400  
RM 4Y  
4Z  
100  
200  
400  
600  
800  
1000  
600  
0.9  
1.0  
30  
45  
1.00  
–40 to +150  
200  
1.0  
10  
1
0.95  
SFPM-62  
-64  
4
3.0  
3.2  
3.0  
3.5  
0.98  
10  
8
4A  
–40 to +150  
4B  
150  
350  
0.97  
0.92  
4C  
4AM  
Axial Type  
(Ta =25ºC)  
Electrical Characteristics  
Absolute Maximum Ratings  
IF (AV) IFSM  
VF  
(V)  
IR  
(µA)  
Fig.  
No.  
VRM  
(V)  
Condition  
Type No.  
Tj  
Tstg  
(ºC)  
Center-tap Type  
(A)  
(A)  
(Ta =25ºC)  
Electrical Characteristics  
IF  
(A)  
max  
0.98  
max  
10  
Absolute Maximum Ratings  
Tj Tstg  
(ºC)  
AM01Z  
01  
200  
400  
600  
200  
400  
600  
100  
200  
400  
600  
800  
1000  
400  
600  
800  
200  
400  
600  
800  
1000  
600  
800  
1000  
200  
400  
600  
800  
200  
400  
600  
800  
1000  
200  
400  
600  
800  
1000  
400  
600  
800  
1000  
VF  
(V)  
IR  
(µA)  
Fig.  
No.  
Condition  
Type No.  
VRM  
(V)  
IF (AV) IFSM  
1.0  
35  
–40 to +150  
–40 to +150  
1.0  
1.0  
2
3
(A)  
(A)  
IF  
(A)  
max. per  
chip  
max. per  
chip  
01A  
EM01Z  
01  
FMM-22S,R  
-24S,R  
200  
400  
600  
100  
200  
400  
600  
10.0  
100  
–40 to +150  
1.1  
5.0  
10  
10  
9
1.0  
1.0  
1.2  
45  
45  
0.97  
0.97  
0.92  
10  
-26S,R  
01A  
EM 1Y  
1Z  
FMM-31S,R  
-32S,R  
20.0  
120  
–40 to +150  
1.1 10.0  
10  
-34S,R  
1
–40 to +150  
1.0  
-36S,R  
1A  
10  
4
1B  
35  
80  
1C  
EM 2  
2A  
–40 to +150  
–40 to +150  
1.2  
1.0  
2B  
RM 1Z  
1
1.0  
0.8  
50  
40  
0.95  
1.20  
0.92  
5
1A  
1B  
1C  
RM 11A  
11B  
11C  
RM 10Z  
10  
5
1.2  
1.5  
1.2  
100  
120  
150  
–40 to +150  
–40 to +150  
1.5  
1.5  
10  
10  
0.91  
0.91  
10A  
10B  
RM 2Z  
2
1.2  
1.2  
100  
–40 to +150  
1.5  
10  
2A  
2B  
2C  
6
RO 2Z  
2
80  
2A  
–40 to +150  
–40 to +150  
0.92  
0.95  
1.5  
2.5  
10  
10  
2B  
2C  
RM 3  
3A  
2.5  
2.0  
150  
7
3B  
3C  
89  

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