Datasheet > ETQ-P6F0R8LFA

ETQ-P6F0R8LFA

更新时间： 2024-11-26 10:16:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		双倍数据速率控制器
页数	文件大小	规格书
19页	495K
描述
Dual Mobile-Friendly DDR / Dual-Output PWM Controller

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中文翻译

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ETQ-P6F0R8LFA 数据手册

November 2010

FAN5236

Dual Mobile-Friendly DDR / Dual-Output PWM Controller

Features

Description

The FAN5236 PWM controller provides high efficiency

and regulation for two output voltages adjustable in the

range of 0.9V to 5.5V required to power I/O, chip-sets,

and memory banks in high-performance notebook

Highly Flexible, Dual Synchronous Switching PWM

Controller that Includes Modes for:

DDR Mode with In-phase Operation for

Reduced Channel Interference

computers,

PDAs,

and

Internet

appliances.

Synchronous rectification and hysteretic operation at

light loads contribute to high efficiency over a wide

range of loads. The Hysteretic Mode can be disabled

separately on each PWM converter if PWM Mode is

desired for all load levels. Efficiency is enhanced by

using MOSFET R_DS(ON)as a current-sense component.

90° Phase-shifted, Two-stage DDR Mode for

Reduced Input Ripple

Dual Independent Regulators, 180° Phase

Shifted

Complete DDR Memory Power Solution

V_TTTracks V_DDQ/2

Feedforward ramp modulation, average-current-mode

control scheme, and internal feedback compensation

provide fast response to load transients. Out-of-phase

operation with 180-degree phase shift reduces input

current ripple. The controller can be transformed into a

complete DDR memory power supply solution by

activating a designated pin. In DDR mode, one of the

channels tracks the output voltage of another channel

and provides output current sink and source capability

— essential for proper powering of DDR chips. The

buffered reference voltage required by this type of

memory is also provided. The FAN5236 monitors these

outputs and generates separate PGx (power good)

signals when the soft-start is completed and the output

is within ±10% of the set point. Built-in over-voltage

protection prevents the output voltage from going above

120% of the set point. Normal operation is automatically

restored when the over-voltage conditions cease.

Under-voltage protection latches the chip off when

output drops below 75% of the set value after the soft-

start sequence for this output is completed. An

adjustable over-current function monitors the output

current by sensing the voltage drop across the lower

MOSFET. If precision current-sensing is required, an

external current-sense resistor may be used.

V_DDQ/2Buffered Reference Output

Lossless Current Sensing on Low-side MOSFET or

Precision Over-Current Using Sense Resistor

V_CCUnder-Voltage Lockout

Converters can Operate from +5V or 3.3V or

Battery Power Input (5V to 24V)

Excellent Dynamic Response with Voltage

Feedforward and Average-Current-Mode Control

Power-Good Signal

Supports DDR-II and HSTL

Light-Load Hysteretic Mode Maximizes Efficiency

TSSOP28 Package

Applications

DDR V_DDQand V_TTVoltage Generation

Mobile PC Dual Regulator

Server DDR Power

Hand-held PC Power

Related Resources

Application Note — AN-6002 Component

Calculations and Simulation Tools for FAN5234 or

FAN5236

Application Note — AN-1029 Maximum Power

Enhancement Techniques for SO-8 Power

MOSFET

FAN5236 • Rev. 1.3.2

www.fairchildsemi.com

12 3 4 5 6 7...19

中文翻译

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