生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.58 | Is Samacsys: | N |
最大集电极电流 (IC): | 800 A | 集电极-发射极最大电压: | 1200 V |
配置: | SINGLE WITH BUILT-IN DIODE | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-PUFM-X7 | 元件数量: | 1 |
端子数量: | 7 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 6250 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管元件材料: | SILICON | VCEsat-Max: | 3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FZ800R12KF4 | ETC | IGBT Module |
获取价格 |
|
FZ800R12KL4C | INFINEON | Technische Information / Technical Information |
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|
FZ800R12KS4 | ETC | IGBT-Module |
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|
FZ800R12KS4_B2 | EUPEC | High Power Module with AlSiC base plate and short tail IGBT2 for high switching frequency |
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|
FZ800R12KS4B2NOSA1 | INFINEON | Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 |
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|
FZ800R12KS4V2 | ETC | IGBT Module |
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