Datasheet > ESTF20D30SU

ESTF20D30SU

更新时间： 2024-10-15 18:09:23

品牌	Logo	应用领域
麦思浦 - MASPOWER		/
页数	文件大小	规格书
4页	1314K
描述
TO-247

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中文翻译

获取价格

数据手册

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ESTF20D30SU 数据手册

ESTF20D30SU

High Performance Fast Recovery Diode

Features



Planar passivated chips

Very low leakage current

Very short recovery time

Improved thermal behaviour

Very low Irm-values

Avalanche voltage rated for reliable operation

Soft reverse recovery for low EMI/RFI

Low Irm reduces:



Power dissipation within the diode

Turn-on loss in the commutating switch

Applications



Antiparallel diode for high frequency

switching devices



Antisaturation diode

Snubber diode

Free wheeling diode

Rectifiers in switch mode power

supplies (SMPS)



Uninterruptible power supplies (UPS)

Absolute Maximum Ratings vs.Electrical Characteristics

(T_C=25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Values

Unit

Maximum Repetitive Reverse

Voltage

V_RRM

300

Tvj=25℃

V_R=300V

μA

Reverse current

I_R

Tvj=150℃

0.06

1.27

1.45

0.98

1.17

I_F=10A

Tvj=25℃

I_F=20A

Forward voltage

V_F

I_F=10A

Tvj=150℃

I_F=20A

Rectangular

Average Forward Current

Threshold Voltage

I_F(AV)

V_F0

r_F

d=0.5,T_C=145°C

0.74

17.7

Power loss calculation

only，Tvj=175℃

Slope resistance

mΩ

12 3 4

中文翻译

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