Datasheet > ESJA52-10_17

ESJA52-10_17

更新时间： 2024-01-06 14:14:43

品牌	Logo	应用领域
HVGT		高压
页数	文件大小	规格书
2页	650K
描述
5.0mA 10kV 80nS-- HIGH VOLTAGE RECTIFIER DIODES

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ESJA52-10_17 数据手册

ESJA52-10

5.0mA 10kV 80nS-- HIGH VOLTAGE RECTIFIER DIODES

HVGT High voltage silicon rectifier diodes is made of

SHAPE DISPLAY:

high quality glass passivated chip and high reliability

epoxy resin sealing structure, and through professional

testing equipment inspection qualified after to customers.

FEATURES:

1. High reliability design.

2. High voltage design.

3. High frequency .

4. Conform to RoHS.

5. Epoxy resin molded in vacuumHave

anticorrosion in the surface.

SIZE: (Unit:mm)

HVGT NAME: DO-310

APPLICATIONS:

1. High voltage multiplier circuit

2. Electrostatic generator circuit .

3. General purpose high voltage rectifier.

4. Other.

MECHANICAL DATA:

1. Case: epoxy resin molding.

2. Terminal: welding axis.

3. Net weight: 0.30 grams (approx).

MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value Units

Repetitive Peak Renerse Voltage

Average Output Current

Suege Current

VRRM

Ta=25°C;

5.0

Ta=25°C;Resistive Load

Ta=25°C; 1/2 Sine(60Hz)

IFSM

0.5

Junction Temperature

-40~+125

125

°C

Allowable Operation Case Temperature

Storage Temperature

TSTG

-40~+125

ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified)

Items

Symbols

Condition

Data value Units

Maximum Forward Voltage Drop

IR1

IR2

TRR

at 25°C; at IF(AV)

at 25°C; at VRRM

2.0

5.0

Maximum Reverse Current

at 100°C; atVRRM

Maximum Reverse Recovery Time

Junction Capacitance

at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR

at 25°C; VR=0V; f=1MHz

1.0

GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638

2016 1 / 2

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