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ESJA19-10 PDF预览

ESJA19-10

更新时间: 2024-02-22 23:46:02
品牌 Logo 应用领域
富士电机 - FUJI 二极管
页数 文件大小 规格书
2页 27K
描述
Rectifier Diode, 1 Element, 0.005A, 10000V V(RRM), Silicon, ULTRA SMALL PACKAGE-2

ESJA19-10 技术参数

生命周期:Obsolete包装说明:O-XALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.84其他特性:HIGH RELIABILITY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-XALF-W2元件数量:1
端子数量:2最高工作温度:120 °C
最大输出电流:0.005 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大重复峰值反向电压:10000 V
最大反向恢复时间:0.045 µs表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

ESJA19-10 数据手册

 浏览型号ESJA19-10的Datasheet PDF文件第2页 
ESJA19  
(10kV,12kv/5mA)  
Outline Drawings  
HIGH VOLTAGE DIODE  
ESJA19 is high reliability resin molded type high voltage  
diode in small size package which is sealed (a multilayed  
mesa type silicon chip) by epoxy resin.  
Cathode Mark  
Lot No.  
o 2.5  
o 0.5  
Features  
Ultra high speed switching  
27 min.  
10  
27 min.  
Low VF  
High surge resisitivity for CRT discharge  
High reliability design  
Ultra small pakage  
Cathode Mark  
Type  
Mark  
Applications  
Rectification for CRT display monitor high voltage  
ESJA19-10  
ESJA19-12  
power supply (FBT: Flyback Transformer)  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings  
Symbols  
Items  
ESJA19  
Condition  
Units  
-10  
-12  
VRRM  
Repetitive Peak Reverse Voltage  
Average Output Current  
Surge Current  
10  
12  
kV  
mA  
A
IO  
5
Ta=25°C,Resistive Load  
IFSM  
Tj  
0.5  
10mS Sine-half wave  
peak value  
Junction Temperature  
120  
100  
°C  
°C  
°C  
Tc  
Allowable Operation Case Temperature  
Storage Temperature  
Tstg  
-40 to +120  
Electrical Characteristics (Ta=25°C Unless otherwise specified )  
Items  
ESJA19  
Symbols  
Conditions  
Units  
-10  
-12  
Maximum Forward Voltage Drop  
Maximum Reverse Current  
36  
42  
VF  
IF=10mA  
V
2
IR  
trr  
VR=VRRM  
µA  
µs  
Maximum Reverse Recovery Time  
Ta=25°C,IF=2mA,IR=4mA  
0.045  
1
Junction Capacitance  
Cj  
Ta=25°C,VR=0V,f=1MHz  
pF  

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