ESDULC64DW
ESD Protection Diode
4
5
6
1. I/O1 2. GND 3. I/O2
4. I/O3 5. VCC 6. I/O4
SOT-363 Plastic Package
1
3
2
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol
PPK
Value
Unit
W
Peak Pulse Power (tp = 8/20 µs)
Peak Pulse Current (tp = 8/20 µs)
100
6
IPP
A
Air
Contact
±15
±15
IEC61000-4-2 (ESD)
VESD
KV
Junction Temperature
Tj
125
℃
℃
Storage Temperature Range
Tstg
-55 to + 150
Characteristics at Ta = 25℃
Parameter
Symbol
VBR
IR
Min.
Max.
-
Unit
Reverse Breakdown Voltage
at IR = 1 mA, Pin 5 to GND
6
-
V
Leakaeg Current
at VR = 5 V
0.5
μA
Clamping Voltage
at IPP = 1 A, tp = 8/20 µs, Any I/O Pin to GND
at IPP = 6 A, tp = 8/20 µs, Any I/O Pin to GND
-
-
12
17
VC
V
Junction Capacitance
at VR = 0 V, f = 1 MHz, Between I/O Pin to GND
Ci/o-GND
Ci/o-i/o
-
-
1
pF
pF
Junction Capacitance
at VR = 0 V, f = 1 MHz, Between I/O Pins
0.5
1 / 3
®
Dated: 17/03/2023 Rev: 04