Datasheet > ESDUL6V1HP

ESDUL6V1HP

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	187K
描述
静电保护二极管

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中文翻译

获取价格

数据手册

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ESDUL6V1HP 数据手册

ESDUL6V1HP

ESD Protection Diode

PINNING

DESCRIPTION

Cathode

Features

• Protects one data line

• Low leakage current

• Low operating voltage

Anode

Transparent top view

Simplified outline DFN1006-2H and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

110

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

7.5

Air

Contact

± 30

IEC61000-4-2 (ESD)

V_ESD

Operation Junction Temperature

Storage Temperature Range

T_j

125

℃

T_stg

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

I_R

Min.

6.1

Typ.

Max.

7.2

Unit

Reverse Breakdown Voltage

at I_R= 1 mA

Reverse Current

at V_RWM= 3 V

Forward Voltage

at I_F= 10 mA

V_F

Clamping Voltage

V_C

at I_PP= 7.5 A, tp = 8/20 µs

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

9.1

13.4

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

R_dyn

0.4

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated: 29/05/2023 Rev: 02

12 3

中文翻译

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