Datasheet > ESDU0501BP

ESDU0501BP

更新时间： 2023-12-06 20:07:33

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	172K
描述
静电保护二极管

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ESDU0501BP 数据手册

ESDU0501BP

ESD Protection Diode

PINNING

DESCRIPTION

Cathode

Features

Anode

• Protects one data line

• Low leakage current

• Low clamping voltage

Transparent top view

Simplified outline DFN1006-2B and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

I_PP

Peak Pulse Current (tp = 8/20 µs)

IEC61000-4-2 (ESD)

Air

Contact

± 20

± 15

V_ESD

Operation Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

Forward Voltage

at I_F= 10 mA

V_F

I_R

1.2

μA

Reverse Current

at V_RWM= 5 V

0.25

12.5

Clamping Voltage

at I_PP= 2 A, tp = 8/20 µs

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 100 ns, tn = 0.2 ns

at I_TLP= 16 A, tp = 100 ns, tn = 0.2 ns

V_CL

11.3

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

R_dyn

1.06

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16A.

1 / 3

Dated: 31/08/2022 Rev: 05

12 3

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