Datasheet > ESDM1121MX4T5G

ESDM1121MX4T5G

更新时间： 2025-07-18 19:36:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	128K
描述
元器件封装:2-X4DFN（0.45x0.24）;

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ESDM1121MX4T5G 数据手册

ESDM1121

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12V ESD Protection Diodes

Micro−packaged Diodes for ESD

Protection

www.onsemi.com

The ESDM1121 Series is designed to protect voltage sensitive

components from ESD. Excellent clamping capability, low leakage,

and fast response time provide best in class protection on designs that

are exposed to ESD. Because of its small size, it is suited for use in

smartphone, smart−watch, or many other portable / wearable

applications where board space comes at a premium.

MARKING

DIAGRAM

ESDM1121 (01005)

X4DFN2

CASE 718AA

Features

P = Specific Device Code

M = Date Code

• Low Capacitance (15 pF Typ, I/O to GND)

• Small Body Outline Dimensions − 01005 Size: 0.435 x 0.23 mm

• Protection for the Following IEC Standards:

PIN CONFIGURATION

AND SCHEMATIC

IEC 61000−4−2 (Level 4)

• Low ESD Clamping Voltage

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

−55 to +150

260

Unit

°C

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Operating Junction Temperature Range

Storage Temperature Range

stg

°C

Lead Solder Temperature −

Maximum (10 Seconds)

°C

ESDM1121:

IEC 61000−4−2 Contact

IEC 61000−4−2 Air

ESD

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

See Application Note AND8308/D for further description of

survivability specs.

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

Publication Order Number:

July, 2018 − Rev. P3

ESDM1121/D

12 3 4 5 6 7

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