Datasheet > ESDLC0994DW

ESDLC0994DW

更新时间： 2023-12-06 20:00:52

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	250K
描述
静电保护二极管

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ESDLC0994DW 数据手册

ESDLC0994DW

4-Channel Low Capacitance TVS Array

Features

• Low leakage current

• Low clamping voltage

• Low capacitance

1. I/O1 2. GND 3. I/O2

4. I/O3 5. VCC 6. I/O4

Marking Code: EF

SOT-363 Plastic package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

150

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

ESD per IEC 61000-4-2 (Air)

ESD per IEC 61000-4-2 (Contact)

± 30

V_ESD

Operation Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Any I/O Pin to Gnd

V_RWM

V_(BR)R

I_R

Reverse Breakdown Voltage

at I_T= 1 mA, Any I/O Pin to Gnd

μA

Reverse Current

at V_RWM= 5 V, Any I/O Pin to Gnd

Forward Voltage

V_F

at I_F= 10 mA, Pin 2 to Pin 5

Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs, Any I/O Pin to Gnd

at I_PP= 5 A, tp = 8/20 µs, Any I/O Pin to Gnd

at I_PP= 10 A, tp = 8/20 µs, Any I/O Pin to Gnd

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns, Any I/O Pin to Gnd

at I_TLP=16 A, tp = 0.2/100 ns, Any I/O Pin to Gnd

V_CL

9.6

14.5

Junction Capacitance

at V_R= 0 V, f = 1 MHz, Between I/O Pins

at V_R= 0 V, f = 1 MHz, Any I/O Pin to Gnd

C_j

0.9

1.8

Dynamic Resistance ¹⁾

R_dyn

0.41

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated: 13/01/2022 Rev：02

12 3

下载PDF

与ESDLC0994DW相关器件

型号	品牌	描述	获取价格	数据表
ESDLC1213DE	SWST	静电保护二极管	获取价格
ESDLC12VAE2	MCC	Tape&Reel;	获取价格
ESDLC12VD3	MCC	3.3V-12Volts ESD Protection Device	获取价格
ESDLC12VD3B	MCC	3.3V-12Volts ESD Protection Device Low clamping voltage	获取价格
ESDLC12VD3B-TP	MCC	Trans Voltage Suppressor Diode, 350W, 12V V(RWM), Bidirectional, 2 Element, Silicon, LEAD	获取价格
ESDLC12VLB	MCC	Tape&Reel: 10Kpcs/Reel;	获取价格