ESDLC054D
ESD Protection Diode
4
5
6
Features
• Low clamping voltage
• Low capacitance
1. I/O1 2. GND 3. I/O2
4. I/O3 5. VCC 6. I/O4
SOT-26 Plastic package
1
3
2
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol
PPK
Value
300
12
Unit
W
Peak Pulse Power (tp = 8/20 µs)
Peak Pulse Current (tp = 8/20 µs)
IPP
A
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
VESD
± 30
KV
Operation Junction Temperature Range
Storage Temperature Range
Tj
- 55 to + 125
- 55 to + 150
℃
℃
Tstg
Characteristics at Ta = 25℃
Parameter
Symbol
Min.
-
Typ.
-
Max.
5
Unit
V
Reverse Stand-Off Voltage
at Pin 5 to 2
VRWM
V(BR)R
IR
Reverse Breakdown Voltage
at IT = 1 mA, Pin 5 to 2, Any I/O to GND
6
-
-
-
-
-
5
V
μA
V
Reverse Current
at VRWM = 5 V, Pin 5 to 2, Any I/O to GND
Forward Voltage
at IF = 15 mA
-
VF
1.2
Clamping Voltage
at IPP = 1 A, tp = 8/20 µs, Any I/O Pin to GND
at IPP = 5 A, tp = 8/20 µs, Any I/O Pin to GND
VC
Cj
-
-
-
-
12.5
17.5
V
Junction Capacitance
at VR = 0 V, f = 1 MHz, Any I/O Pin to GND
at VR = 0 V, f = 1 MHz, Between I/O Pins
-
-
-
5
-
pF
0.7
1 / 3
®
Dated: 20/10/2022 Rev: 05