Datasheet > ESDLC0542MP

ESDLC0542MP

更新时间： 2024-09-28 14:55:51

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	202K
描述
静电保护二极管

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中文翻译

获取价格

数据手册

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ESDLC0542MP 数据手册

ESDLC0542MP

ESD Protection Diode

I/O1

GND

I/O2

Features

• Low capacitance between I/O Lines

• Low clamping voltage

• Low leakage voltage

1. I/O1 2. I/O2 3. GND

4. GND 5. NC 6. NC

GND

DFN1610-6H Plastic package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

P_PK

I_PP

Air

Contact

± 18

± 12

ESD (IEC 61000-4-2)

V_ESD

Operating Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Working Voltage (Any I/O to GND)

Reverse Breakdown Voltage

at I_R= 1 mA, Any I/O to GND

V_(BR)R

6.5

0.6

1.2

Forward Voltage

at I_F= 15 mA, Any I/O to GND

V_F

I_R

Reverse Current

at V_RWM= 5 V, Any I/O to GND

Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs, Any I/O to GND

at I_PP= 5 A, tp = 8/20 µs, Any I/O to GND

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 100 ns, tn = 0.2 ns

at I_TLP=16 A, tp = 100 ns, tn = 0.2 ns

V_CL

10.8

19.5

Junction Capacitance

C_j

0.9

0.4

at V_R= 0 V, f = 1 MHz, Any I/O Pin to GND

at V_R= 0 V, f = 1 MHz, Between I/O Pins

Dynamic Resistance ¹⁾

R_dyn

0.7

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16A

1 / 3

Dated: 06/07/2023 Rev : 01

12 3

中文翻译

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