Datasheet > ESDLC0535MP

ESDLC0535MP

更新时间： 2023-12-06 20:04:04

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	223K
描述
静电保护二极管

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ESDLC0535MP 数据手册

ESDLC0535MP

ESD Protection Diode

Low Capacitance Array for High Speed Date Lines

Features

• Low clamping voltage

• Low capacitance

Pin 1

Pin 2

Pin 4

Pin 5

Pin 3, 8

1. I/O 2. I/O 3. GND 4. I/O 5. I/O

6. NC 7. NC 8. GND 9. NC 10. NC

DFN2510-10 Plastic Package

Applications

• Digital Visual interface(DVI)

• Desktop and Notebooks PCs

• Consumer Electronics

• SATA and eSATA interface

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

ESD per IEC 61000-4-2

I_PP

3.5

Air

Contact

± 15

± 10

V_ESD

Operation Temperature Range

Storage Temperature Range

℃

T_OP

T_stg

- 55 to + 85

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage, Any I/O to Gnd

V_RWM

Reverse Breakdown Voltage

at I_R= 1 mA, Any I/O to GND

V_(BR)R

Reverse Current

at V_RWM= 5 V

I_R

1.5

1.1

μA

Forward Voltage

V_F

V_C

at I_F= 15 mA, GND to I/O

Clamping Voltage

12.9

at I_PP= 3.5 A, tp = 8/20 μs, Any I/O to GND

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns, Any I/O to GND

at I_TLP=16 A, tp = 0.2/100 ns, Any I/O to GND

V_CL

9.8

14.9

Channel Input Capacitance

at V_IN= 2.5 V, f = 1 MHz, Any I/O to GND

Dynamic Resistance ¹⁾

C_IN

0.65

R_dyn

0.43

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated：06/02/2023 Rev:03

12 3

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