Datasheet > ESDLC0524CMP

ESDLC0524CMP

更新时间： 2024-09-28 14:54:43

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	234K
描述
静电保护二极管

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中文翻译

获取价格

数据手册

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ESDLC0524CMP 数据手册

ESDLC0524CMP

Ultra Low Capacitance TVS Arrays

Features

• Ultra low clamping voltage

• Low leakage current

• Protects 4 Lines

Pin 1

Pin 2

Pin 4

Pin 5

• Ultra low capacitance

Pin 3, 8

1. I/O 2. I/O 3. GND 4. I/O 5. I/O

6. NC 7. NC 8. GND 9. NC 10.NC

DFN2510-10 Plastic package

Absolute Maximum Ratings (at T_a= 25℃)

Parameter

Symbol

P_PK

Value

100

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

ESD per IEC 61000-4-2 (Air)

ESD per IEC 61000-4-2 (Contact)

±25

±20

V_ESD

Operation Temperature Range

Storage Temperature Range

T_opr

T_stg

- 55 to + 125

- 55 to + 150

℃

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Working Voltage

Reverse Breakdown Voltage

at I_R= 1 mA, Any I/O Pin to Gnd

V_(BR)R

Reverse Current

at V_RWM= 5 V, Any I/O Pin to Gnd

I_R

μA

Positive Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs, Any I/O Pin to Gnd

at I_PP= 5 A, tp = 8/20 µs, Any I/O Pin to Gnd

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 100 ns, tn = 0.2 ns, Any I/O Pin to Gnd

at I_TLP=16 A, tp = 100 ns, tn = 0.2 ns, Any I/O Pin to Gnd

V_CL

10.5

Junction Capacitance

at V_R= 0 V, f = 1 MHz, Any I/O Pin to Gnd

at V_R= 0 V, f = 1 MHz, Between I/O Pins

C_j

0.8

0.4

Dynamic Resistance ¹⁾

R_dyn

0.46

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16A.

1 / 3

Dated：02/08/2022 Rev: 02

12 3

中文翻译

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