Datasheet > ESDLC0502DW

ESDLC0502DW

更新时间： 2023-12-06 20:11:18

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	493K
描述
静电保护二极管

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中文翻译

获取价格

数据手册

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ESDLC0502DW 数据手册

ESDLC0502DW

Low Capacitance TVS Array

1. I/O1 2. GND 3. I/O2

4. I/O3 5. VCC 6. I/O4

Marking Code: 3T

SOT-363 Plastic package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

I_PP

Value

Unit

Peak Pulse Current (t_p= 8/20 µs)

Peak Pulse Power (t_p= 8/20 µs)

P_PK

ESD per IEC 61000-4-2 (Air) ¹⁾

ESD per IEC 61000-4-2 (Contact)

± 17

± 14

V_ESD

Operation Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Between any I/O lines to GND

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Max.

Unit

Reverse Stand-Off Voltage

at Between I/O lines to Gnd or I/O to I/O

Reverse Breakdown Voltage

at I_t= 1 mA, Between I/O lines to GND

V_(BR)R

I_R

Reverse Current

μA

at V_RWM= 5 V, at Between I/O lines to Gnd or I/O to I/O

Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs, Between I/O lines to GND

at I_PP= 3 A, tp = 8/20 µs, Between I/O lines to GND

at I_PP= 3 A, tp = 8/20 µs, Between I/O to I/O

V_C

C_j

Junction Capacitance

at V_R= 0 V, f = 1 MHz, Between I/O lines to GND

at V_R= 0 V, f = 1 MHz, Between I/O to I/O

0.9

0.7

Dated: 27/09/2017 Rev: 02

12 3

中文翻译

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