Datasheet > ESDLC0502DE

ESDLC0502DE

更新时间： 2023-12-06 20:08:12

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	182K
描述
静电保护二极管

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数据手册

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ESDLC0502DE 数据手册

ESDLC0502DE

ESD Protection Diode

Features

• Protects up to two I/O lines & power line

• Low leakage current and clamping voltage

• Low capacitance

1. I/O1 2. GND 3. I/O2

4. I/O3 5. VCC 6. I/O4

Marking Code : A

SOT-563 Plastic package

Absolute Maximum Ratings (T_a= 25 ℃)

Parameter

Symbol

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

P_PK

I_PP

Peak Pulse Current (tp = 8/20 µs)

ESD Discharge (IEC61000-4-2)

Air

Contact

± 20

± 15

V_ESD

Junction Temperature

T_j

- 55 to + 125

- 55 to + 150

℃

Storage Temperature Range

T_stg

Characteristics at T_a= 25 ℃

Parameter

Symbol

V_RWM

Min.

Max.

Unit

Reverse Working Voltage

Between I/O lines to Gnd or I/O to I/O

Reverse Breakdown Voltage

at I_R= 1 mA , Between I/O lines to Gnd

Reverse Current

V_(BR)R

I_R

µA

at V_RWM= 5 V, Between I/O lines to Gnd or I/O to I/O

Clamping Voltage

at I_PP= 1 A , tp = 8/20 µs , Between I/O lines to Gnd

at I_PP= 3 A , tp = 8/20 µs , Between I/O to Gnd

at I_PP= 3 A , tp = 8/20 µs , Between I/O to I/O

Junction Capacitance

at V_R= 0 V, f = 1 MHz , Between I/O to Gnd

at V_R= 0 V, f = 1 MHz , Between I/O to I/O

V_C

C_j

0.9

0.7

1 / 3

Dated: 15/10/2020 Rev : 01

12 3

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