DATA SHEET
www.onsemi.com
Ultra-Low Capacitance ESD
Protection Diodes
Micro−Packaged Diodes for ESD Protection
X4DFN3
CASE 718AB
ESDL3552B
The ESDL3552B is designed to protect voltage sensitive
components that require ultra-low capacitance from ESD and transient
voltage events. Excellent clamping capability, low capacitance, high
breakdown voltage, high linearity, low leakage, and fast response time
make these parts ideal for ESD protection on designs where board
space is at a premium. It has industry leading capacitance linearity
over voltage making it ideal for high−speed data line protection
applications.
MARKING DIAGRAM
PIN 1
A
= Specific Device Code
Features
I/O
I/O
Pin 1
Pin 3
• Industry Leading Capacitance Linearity Over Voltage
• Ultra−Low Capacitance: 0.25 pF
• Insertion Loss: 0.26 dB @ 5 GHz
• 0201 Isolated DSN Package: 0.62 mm x 0.32 mm
• Stand−off Voltage: 5.0 V
• Low Leakage: < 50 nA
• Low Dynamic Resistance: < 1.0 W
• These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS
Compliant
GND
Pin 2
Typical Applications
• High Speed Data Line Protection
• USB 2.0, USB 3.0, USB 3.1
ORDERING INFORMATION
†
Package
Device
Shipping
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
X4DFN3
(Pb−Free/
Halide
10000 / Tape
& Reel
Rating
Symbol
Value
Unit
ESDL3552BPFCT5G
IEC 61000−4−2 Level 4 (Contact) (Note 1)
IEC 61000−4−2 Level 4 (Air) (Note 1)
ESD
20
20
kV
Free)
Maximum Peak Pulse Current
I
2.0
A
PP
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
IEC 61000−4−5 8/20 ms (Lightning) (Note 2)
Total Power Dissipation (Note 3) @ T = 25°C
Thermal Resistance, Junction−to−Ambient
°P °
R
300
400
mW
°C/W
A
D
q
JA
Junction and Storage Temperature Range
T , T
−55 to
+150
°C
J
stg
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse at T = 25°C, per IEC61000−4−2 waveform.
A
2. Non−repetitive current pulse at T = 25°C, per IEC61000−4−5 waveform.
A
3. Mounted with recommended minimum pad size, DC board FR−4
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
April, 2022 − Rev. 1
ESDL3552B/D