Datasheet > ESDHC05D

ESDHC05D

更新时间： 2024-11-06 14:55:35

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	186K
描述
静电保护二极管

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中文翻译

获取价格

数据手册

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ESDHC05D 数据手册

ESDHC05D

ESD Protection Diode

1. I/O1 2. GND 3. I/O2

4. I/O3 5. I/O5 6. I/O4

SOT-26 Plastic Package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

300

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

±25

±20

Air

Contact

ESD Discharge (IEC61000-4-2)

V_ESD

Operation Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

℃

T_stg

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Min.

Typ.

Max.

Unit

Symbol

V_RWM

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_T= 1 mA

V_(BR)R

Leakaeg Current

at V_R= 5 V

μA

I_R

Forward Voltage

at I_F= 10 mA

V_F

Clamping Voltage

at I_PP= 5 A, tp = 8/20 µs

at I_PP= 24 A, tp = 8/20 µs

9.8

14.5

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

7.5

8.7

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

400

C_j

R_dyn

0.1

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

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Dated: 12/06/2023 Rev:02

12 3

中文翻译

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