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ESDBL5V0CBP PDF预览

ESDBL5V0CBP

更新时间: 2024-11-22 14:52:55
品牌 Logo 应用领域
先科 - SWST 二极管
页数 文件大小 规格书
3页 188K
描述
静电保护二极管

ESDBL5V0CBP 数据手册

 浏览型号ESDBL5V0CBP的Datasheet PDF文件第2页浏览型号ESDBL5V0CBP的Datasheet PDF文件第3页 
ESDBL5V0CBP  
ESD Protection Diode  
PINNING  
DESCRIPTION  
Anode  
PIN  
1
Features  
Anode  
2
• Low leakage current  
• Bi-direction high reliability  
1
2
Transparent top view  
Simplified outline DFN1006-2B and symbol  
Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
PPK  
Value  
60  
Unit  
W
Peak Pulse Power (tp = 8/20 µs)  
Peak Pulse Current (tp = 8/20 µs)  
IPP  
4
A
Air  
Contact  
± 15  
± 10  
ESD (IEC61000-4-2 )  
VESD  
KV  
Total Power Dissipation on FR-5 Board 1)  
Junction Temperature Range  
PD  
Tj  
150  
mW  
- 55 to + 125  
- 55 to + 150  
Storage Temperature Range  
1) FR-5 = 1.0 X 0.75 X 0.62 in.  
Tstg  
Characteristics at Ta = 25℃  
Parameter  
Symbol  
VRWM  
Min.  
-
Typ.  
-
Max.  
5
Unit  
V
V
Reverse Stand-Off Voltage  
Reverse Breakdown Voltage  
at IR = 1 mA  
V(BR)R  
5.4  
-
-
-
-
1
Reverse Current  
at VRWM = 5 V  
IRM  
VC  
-
-
µA  
V
Clamping Voltage  
at IPP = 1 A, tp = 8/20 µs  
12.9  
ESD Clamping Voltage  
at ITLP = 4 A, tp = 100 ns, tn = 0.2 ns  
at ITLP =16 A, tp = 100 ns, tn = 0.2 ns  
VCL  
-
-
15.9  
30.2  
-
-
V
Junction Capacitance  
at VR = 0 V, f = 1 MHz  
Dynamic Resistance 1)  
Cd  
-
-
-
0.9  
-
pF  
Rdyn  
1.2  
1)  
Dynamic Resistance calculated from ITLP = 4A to ITLP = 16A.  
1 / 3  
®
Dated: 15/08/2023 Rev: 03  

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