Datasheet > ESDBL5V0CBP

ESDBL5V0CBP

更新时间： 2023-12-06 20:02:08

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	188K
描述
静电保护二极管

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ESDBL5V0CBP 数据手册

ESDBL5V0CBP

ESD Protection Diode

PINNING

DESCRIPTION

Anode

Features

Anode

• Low leakage current

• Bi-direction high reliability

Transparent top view

Simplified outline DFN1006-2B and symbol

Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

Air

Contact

± 15

± 10

ESD (IEC61000-4-2 )

V_ESD

Total Power Dissipation on FR-5 Board ¹⁾

Junction Temperature Range

P_D

T_j

150

℃

- 55 to + 125

- 55 to + 150

Storage Temperature Range

¹⁾FR-5 = 1.0 X 0.75 X 0.62 in.

T_stg

℃

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

5.4

Reverse Current

at V_RWM= 5 V

I_RM

V_C

µA

Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs

12.9

ESD Clamping Voltage

at I_TLP= 4 A, tp = 100 ns, tn = 0.2 ns

at I_TLP=16 A, tp = 100 ns, tn = 0.2 ns

V_CL

15.9

30.2

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_d

0.9

R_dyn

1.2

Ω

Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16A.

1 / 3

Dated: 15/08/2023 Rev: 03

12 3

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