ESDBL5V0BP-AH
ESD Protection Diode
PINNING
DESCRIPTION
Anode
PIN
1
Anode
2
Features
• AEC-Q101 Qualified
• Low leakage current
• Bi-direction high reliability
• Halogen and Antimony Free(HAF),
RoHS compliant
1
2
Transparent top view
Simplified outline DFN1006-2B and symbol
Maximum Ratings (Ta = 25℃)
Parameter
Symbol
PPK
Value
30
Unit
W
Peak Pulse Power (tp = 8/20 µs)
Peak Pulse Current (tp = 8/20 µs)
IPP
2
A
Air
Contact
± 30
± 30
IEC61000-4-2 (ESD)
VESD
KV
Junction Temperature Range
Storage Temperature Range
Tj
- 55 to + 125
- 55 to + 150
℃
℃
Tstg
Characteristics at Ta = 25℃ unless otherwise specified
Parameter
Symbol
VRWM
Min.
-
Typ.
-
Max.
5
Unit
Reverse Stand-Off Voltage
V
V
Reverse Breakdown Voltage
at IR = 1 mA
V(BR)R
5.8
-
-
-
7.8
1
Reverse Current
at VRWM = 5 V
IR
µA
V
Clamping Voltage
VC
-
-
-
-
12.5
15
at IPP = 1 A, tp = 8/20 µs
at IPP = 2 A, tp = 8/20 µs
ESD Clamping Voltage
at ITLP = 4 A, tp = 0.2/100 ns
at ITLP =16 A, tp = 0.2/100 ns
VCL
-
-
8
10.9
-
-
V
Junction Capacitance
at VR = 0 V, f = 1 MHz
Dynamic Resistance 1)
Cj
-
-
15
-
-
pF
Rdyn
0.24
Ω
1) Dynamic Resistance calculated from ITLP = 4A to ITLP = 16 A .
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Dated: 03/05/2023 Rev: 01