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ESDBL5V0BP PDF预览

ESDBL5V0BP

更新时间: 2024-11-19 14:55:23
品牌 Logo 应用领域
先科 - SWST 二极管
页数 文件大小 规格书
4页 211K
描述
静电保护二极管

ESDBL5V0BP 数据手册

 浏览型号ESDBL5V0BP的Datasheet PDF文件第2页浏览型号ESDBL5V0BP的Datasheet PDF文件第3页浏览型号ESDBL5V0BP的Datasheet PDF文件第4页 
ESDBL5V0BP  
ESD Protection Diode  
PINNING  
DESCRIPTION  
Anode  
PIN  
1
Anode  
2
Features  
• Low leakage current  
• Bi-direction high reliability  
1
2
Transparent top view  
Simplified outline DFN1006-2B and symbol  
Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
PPK  
Value  
30  
Unit  
W
Peak Pulse Power (tp = 8/20 µs)  
Peak Pulse Current (tp = 8/20 µs)  
IPP  
2
A
Air  
Contact  
± 30  
± 30  
IEC61000-4-2 (ESD)  
VESD  
KV  
Junction Temperature Range  
Storage Temperature Range  
Tj  
- 55 to + 125  
- 55 to + 150  
Tstg  
Characteristics at Ta = 25unless otherwise specified  
Parameter  
Symbol  
VRWM  
Min.  
-
Typ.  
-
Max.  
5
Unit  
Reverse Stand-Off Voltage  
V
V
Reverse Breakdown Voltage  
at IR = 1 mA  
V(BR)R  
5.8  
-
-
-
7.8  
1
Reverse Current  
at VRWM = 5 V  
IR  
µA  
V
Clamping Voltage  
VC  
-
-
-
-
12.5  
15  
at IPP = 1 A, tp = 8/20 µs  
at IPP = 2 A, tp = 8/20 µs  
ESD Clamping Voltage  
at ITLP = 4 A, tp = 0.2/100 ns  
at ITLP =16 A, tp = 0.2/100 ns  
VCL  
-
-
8
10.9  
-
-
V
Junction Capacitance  
at VR = 0 V, f = 1 MHz  
Dynamic Resistance 1)  
Cj  
-
-
15  
-
-
pF  
Rdyn  
0.24  
1) Dynamic Resistance calculated from ITLP = 4A to ITLP = 16 A .  
®
1 / 4  
Dated: 03/01/2023 Rev: 04  

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