Datasheet > ESDBL5451Z

ESDBL5451Z

更新时间： 2023-12-06 20:03:56

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	187K
描述
静电保护二极管

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ESDBL5451Z 数据手册

ESDBL5451Z

ESD Protection Diode

PINNING

DESCRIPTION

Anode

Features

Anode

• Low clamping voltage

• Low leakage current

Transparent top view

Simplified outline DFN0603 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Peak Pulse Power (tp = 8/20 μs)

P_PK

I_PP

Peak Pulse Current (tp = 8/20 μs)

ESD contact discharge (IEC61000-4-2)

Air

Contact

± 30

V_ESD

Operating Junction Temperature

Storage Temperature Range

T_j

125

℃

T_stg

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

± 5

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

5.1

Reverse Current

at V_RWM= 5 V

I_R

V_HOLD

V_C

Reverse Holding Voltage

at I_HOLD= 50 mA

5.1

Clamping Voltage ²⁾

at V_ESD= 8 KV

Clamping Voltage ³⁾

V_C

at I_PP= 16 A, tp = 100 ns

Clamping Voltage ¹⁾

at I_PP= 1 A, tp = 8/20 μs

at I_PP= 5 A, tp = 8/20 μs

at I_PP= 8 A, tp = 8/20 μs

Junction Capacitance

at V_R= 0 V, f = 1 MHz

at V_R= 5 V, f = 1 MHz

¹⁾Non-repetitive current pulse, according to IEC61000-4-5.

²⁾Contact discharge mode, according to IEC61000-4-2.

7.5

8.5

V_C

C_j

³⁾TLP parameter: Z₀= 50 Ω , tp = 100 ns, tr = 2 ns, averaging window from 60 ns to 80 ns. R_DYNis calculated from 4 A to 16 A.

1 / 3

Dated: 02/03/2023 Rev: 03

12 3

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