Datasheet > ESDBL3V3PD

ESDBL3V3PD

更新时间： 2023-12-06 20:03:58

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	173K
描述
静电保护二极管

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ESDBL3V3PD 数据手册

ESDBL3V3PD

ESD Protection Diode

PINNING

DESCRIPTION

Anode

Features

• Low capacitance

• Low clamping voltage

• Low leakage current

Anode

Transparent top view

Simplified outline DFN1006-2B and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

Air

Contact

ESD (IEC61000-4-2)

V_ESD

± 18

Operating Junction Temperature

Storage Temperature Range

125

T_j

℃

- 55 to + 150

T_stg

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

3.3

Unit

Reverse Working Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

Reverse Current

at V_RWM= 3.3 V

I_R

100

Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs

at I_PP= 2 A, tp = 8/20 µs

V_C

10.5

11.5

ESD Clamping Voltage

at I_TLP= 4 A, tp = 100 ns, tn = 0.2ns

at I_TLP=16 A, tp = 100 ns, tn = 0.2ns

V_CL

6.2

7.2

Junction Capacitance

at V_R= 0 V, f = 1 MHz

C_j

Dynamic Resistance

R_DYN

0.08

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated: 14/08/2023 Rev: 02

12 3

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