Datasheet > ESD9DL5V0BP

ESD9DL5V0BP

更新时间： 2023-12-06 20:02:34

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	187K
描述
静电保护二极管

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ESD9DL5V0BP 数据手册

ESD9DL5V0BP

ESD Protection Diode

PINNING

DESCRIPTION

Anode

Features

Anode

• Low leakage current

• Low body height

Transparent top view

Simplified outline DFN1006-2B and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

150

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

9.4

Air

Contact

± 30

ESD (IEC61000-4-2)

V_ESD

Junction Temperature

T_j

125

℃

Storage Temperature Range

T_stg

- 55 to + 155

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

5.6

Reverse Current

at V_RWM= 5 V

at V_R= 3.5 V

I_R

0.5

0.3

µA

Clamping Voltage

at I_PP= 5 A , tp = 8/20 µs

at I_PP= 9.4 A , tp = 8/20 µs

V_C

11.6

18.6

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

7.4

8.1

Junction Capacitance

at V_R= 0 V , f = 1 MHz

Dynamic Resistance ¹⁾

C_j

R_dyn

0.06

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated: 10/08/2023 Rev : 05

12 3

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