Datasheet > ESD9BL5V0BP

ESD9BL5V0BP

更新时间： 2024-11-21 14:53:39

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	175K
描述
静电保护二极管

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中文翻译

获取价格

数据手册

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ESD9BL5V0BP 数据手册

ESD9BL5V0BP

ESD Protection Diode

PINNING

DESCRIPTION

Anode

Features

Anode

• Low clamping voltage

• Low operating voltage

• Bi-direction high reliability

Transparent top view

Simplified outline DFN1006-2B and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

Air

Contact

±30

ESD (IEC61000-4-2)

V_ESD

Total Power Dissipation on FR-5 Board ¹⁾

Thermal Resistance Junction to Ambient

Junction Temperature Range

P_D

R_θJA

T_j

250

℃/W

℃

500

- 65 to + 150

Storage Temperature Range

¹⁾FR-5 = 1.0 X 0.75 X 0.62 in.

T_stg

℃

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

Reverse Current

at V_RWM= 5 V

I_R

100

Clamping Voltage

10.7

at I_PP= 1 A, tp = 8/20 µs

at I_PP= 3 A, tp = 8/20 µs

at I_PP= 5 A, tp = 8/20 µs

at I_PP= 6 A, tp = 8/20 µs

V_C

ESD Clamping Voltage

at I_TLP= 4 A , tp = 0.2/100 ns

at I_TLP= 16 A , tp = 0.2/100 ns

V_CL

10.9

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_d

R_DYN

0.24

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated: 14/08/2023 Rev: 04

12 3

中文翻译

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