Datasheet > ESD9BL12THP

ESD9BL12THP

更新时间： 2023-12-06 20:02:07

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	173K
描述
静电保护二极管

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ESD9BL12THP 数据手册

ESD9BL12THP

ESD Protection Diode

PINNING

DESCRIPTION

Anode

Features

• Bidirectional device

Transparent top view

Simplified outline DFN1006-2H and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

150

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 μs)

I_PP

IEC61000-4-2 (ESD)

Air

Contact

± 15

± 8

V_ESD

- 55 to + 150

Operating Junction and Storage Temperature Range

T_J, T_stg

℃

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

Reverse Current

at V_RWM= 12 V

I_R

μA

Clamping Voltage

at I_PP= 1 A , tp = 8/20 µs

at I_PP= 5 A , tp = 8/20 µs

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

21.7

27.9

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

R_dyn

0.5

Ω

Dynamic Resistance calculated from I_TLP= 4 A to I_TLP= 16 A.

1 / 3

Dated: 17/05/2023 Rev : 03

12 3

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