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ESD9BL12THP PDF预览

ESD9BL12THP

更新时间: 2024-11-19 14:52:55
品牌 Logo 应用领域
先科 - SWST 二极管
页数 文件大小 规格书
3页 173K
描述
静电保护二极管

ESD9BL12THP 数据手册

 浏览型号ESD9BL12THP的Datasheet PDF文件第2页浏览型号ESD9BL12THP的Datasheet PDF文件第3页 
ESD9BL12THP  
ESD Protection Diode  
PINNING  
DESCRIPTION  
Anode  
PIN  
1
Anode  
2
Features  
• Bidirectional device  
1
2
Transparent top view  
Simplified outline DFN1006-2H and symbol  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
PPK  
Value  
150  
5
Unit  
W
Peak Pulse Power (tp = 8/20 µs)  
Peak Pulse Current (tp = 8/20 μs)  
IPP  
A
IEC61000-4-2 (ESD)  
Air  
Contact  
± 15  
± 8  
VESD  
KV  
- 55 to + 150  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
Characteristics at Ta = 25  
Parameter  
Symbol  
VRWM  
Min.  
-
Typ.  
-
Max.  
12  
Unit  
V
V
Reverse Stand-Off Voltage  
Reverse Breakdown Voltage  
at IR = 1 mA  
V(BR)R  
13  
-
-
-
-
Reverse Current  
at VRWM = 12 V  
IR  
2
μA  
Clamping Voltage  
-
-
-
-
25  
33  
V
at IPP = 1 A , tp = 8/20 µs  
at IPP = 5 A , tp = 8/20 µs  
VC  
ESD Clamping Voltage  
at ITLP = 4 A, tp = 0.2/100 ns  
at ITLP =16 A, tp = 0.2/100 ns  
VCL  
-
-
21.7  
27.9  
-
-
V
Junction Capacitance  
at VR = 0 V, f = 1 MHz  
Dynamic Resistance 1)  
Cj  
-
-
16  
-
-
pF  
Rdyn  
0.5  
1)  
Dynamic Resistance calculated from ITLP = 4 A to ITLP = 16 A.  
1 / 3  
®
Dated: 17/05/2023 Rev : 03  

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