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ESD8V0R1B02LRHE6327XTSA1 PDF预览

ESD8V0R1B02LRHE6327XTSA1

更新时间: 2024-11-19 21:11:11
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网二极管
页数 文件大小 规格书
7页 610K
描述
Trans Voltage Suppressor Diode, 14V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, TSLP-2-17, 2 PIN

ESD8V0R1B02LRHE6327XTSA1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-XBCC-N2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.76最大击穿电压:14 V
最小击穿电压:8.5 V击穿电压标称值:17 V
最大钳位电压:23 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-XBCC-N2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
参考标准:AEC-Q101最大重复峰值反向电压:14 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

ESD8V0R1B02LRHE6327XTSA1 数据手册

 浏览型号ESD8V0R1B02LRHE6327XTSA1的Datasheet PDF文件第2页浏览型号ESD8V0R1B02LRHE6327XTSA1的Datasheet PDF文件第3页浏览型号ESD8V0R1B02LRHE6327XTSA1的Datasheet PDF文件第4页浏览型号ESD8V0R1B02LRHE6327XTSA1的Datasheet PDF文件第5页浏览型号ESD8V0R1B02LRHE6327XTSA1的Datasheet PDF文件第6页浏览型号ESD8V0R1B02LRHE6327XTSA1的Datasheet PDF文件第7页 
ESD8V0R1B...  
Bi-directional Low Capacitance TVS Diode  
ESD / transient protection of high-speed  
data lines in 3.3 / 5 / 12 V applications  
according to:  
IEC61000-4-2 (ESD): 18 kV (air) 
15 kV (contact)  
IEC61000-4-4 (EFT): 40 A (5 / 50 ns)  
Extremely small form factor down to  
0.62 x 0.32 x 0.31 mm³ (0201)  
Max. working voltage: 8 / +14 V  
Very low reverse current < 1 nA typ.  
Very low series inductance down to 0.2 nH typ.  
Low capacitance of 4 pF typ.  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Applications  
USB 2.0, 10/100 Ethernet, Firewire, DVI  
Mobile communication  
Consumer products (STB, MP3, DVD, DSC...)  
LCD displays, camera  
Notebooks and destop computers, peripherals  
ESD8V0R1B-02LS  
ESD8V0R1B-02LRH  
1
2
Type  
ESD8V0R1B-02LRH  
Package  
TSLP-2-17  
Configuration  
1 line, bi-directional  
Marking  
E
ESD8V0R1B-02LS  
TSSLP-2-1  
1 line, bi-directional  
E
2009-12-18  
1

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