Datasheet > ESD3Z5V0

ESD3Z5V0

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		脉冲
页数	文件大小	规格书
4页	860K
描述
反向截止电压（Vrwm）:5V;极性/通道数（Channel）:1-Line，Unidirectional;击穿电压（VBR):5.6V;峰值脉冲电流(Ipp):5A;最大钳位电压(Vc):11.6V;电容（Cj）:35pF

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中文翻译

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数据手册

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ESD3Z5V0 数据手册

UMW

ESD3Z5V0

Description

Applications

Cellular phones

Portable devices

Digital cameras

Power supplies

Features

Small Body Outline Dimensions

Protects one I/O or power line

Low clamping voltage

μs)

300 Watts peak pulse power (tp = 8/20

Transient protection for data lines to

Working voltages: 5V and 36V

Low leakage current

IEC 61000-4-2 (ESD) ±15kV (air), ±8kV

Solid-state silicon-avalanche technology

IEC 61000-4-4 (EFT) 40A (5/50ns)

IEC 61000-4-5 (Lightning) 24A (8/20 μs)

Small package for use in portable electronics

Suitable replacement for MLV’s in ESD

protection applications

We declare that the material of product

compliance with RoHS requirements.

Absolute Ratings (T_amb=25°C )

Symbol

Parameter

Value

Units

P_PP

T_L

Peak Pulse Power (t^p= 8/20μs)

300

Maximum lead temperature for soldering during 10s

Storage Temperature Range

260

°C

T_stg

T_op

T_j

-55 to +155

-40 to +125

150

°C

Operating Temperature Range

Maximum junction temperature

IEC61000-4-2 (ESD)

°C

±15

±8

air discharge

contact discharge

IEC61000-4-4 (EFT)

ESD Voltage

Per Human Body Model

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4

中文翻译

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