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ESAD83-006R PDF预览

ESAD83-006R

更新时间: 2024-11-21 10:15:39
品牌 Logo 应用领域
富士电机 - FUJI 整流二极管肖特基二极管局域网
页数 文件大小 规格书
6页 559K
描述
Schottky Barrier Diode

ESAD83-006R 技术参数

生命周期:Active零件包装代码:TO-3P
包装说明:PLASTIC, TO-3P, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.72
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSFM-T3JESD-609代码:e2
最大非重复峰值正向电流:120 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:60 V表面贴装:NO
端子面层:TIN COPPER端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

ESAD83-006R 数据手册

 浏览型号ESAD83-006R的Datasheet PDF文件第2页浏览型号ESAD83-006R的Datasheet PDF文件第3页浏览型号ESAD83-006R的Datasheet PDF文件第4页浏览型号ESAD83-006R的Datasheet PDF文件第5页浏览型号ESAD83-006R的Datasheet PDF文件第6页 
http://www.fujisemi.com  
FUJI Diode  
ESAD83-006R  
Schottky Barrier Diode  
Maximum Rating and Characteristics  
Maximum ratings (at Ta=25˚C unless otherwise specified.)  
Item  
Symbols  
Conditions  
Ratings  
Units  
Repetitive peak reverse voltage  
VRRM  
60  
V
-
50Hz Square wave duty =1/2  
Tc = 119˚C  
Average output current  
Io  
30 *  
A
Non-repetitive forward surge current**  
Operating junction temperature  
Storage temperature  
I
FSM  
Sine wave, 10ms 1shot  
120  
150  
A
Tj  
˚C  
˚C  
-
-
Tstg  
-40 to +150  
Note* Out put current of center tap full wave connection.  
Note** Rating per element  
Electrical characteristics (at Ta=25˚C unless otherwise specified.)  
Item  
Symbols  
Conditions  
= 12.5 A  
Maximum  
0.58  
Units  
V
Forward voltage***  
Reverse current***  
Thermal resistance  
Note*** Rating per element  
V
F
I
F
I
R
V
R
=VRRM  
20  
mA  
Rth(j-c)  
Junction to case  
1.2  
˚C/W  
Mechanical characteristics  
Item  
Conditions  
Maximum  
0.4 to 0.6  
5.5  
Units  
N•m  
g
Mounting torque  
Approximate mass  
Recommended torque  
-
1

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