Datasheet > ESAD39MC

ESAD39MC

更新时间： 2024-11-21 12:55:31

品牌	Logo	应用领域
富士电机 - FUJI		二极管快恢复二极管快速恢复二极管
页数	文件大小	规格书
3页	74K
描述
FAST RECOVERY DIODE

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中文翻译

获取价格

数据手册

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ESAD39MC 数据手册

ESAD39M(C,N,D) (10A) (400V to 600V / 10A)

Outline drawings, mm

FAST RECOVERY DIODE

5.5^±0.3

15.5 ^±0.3

ø3.2 ^±0.2

3.2^+0.3

2.1^±0.3

1.6^±0.3

1.1^—⁺⁰⁰^.2^.1

3.5 ^±0.2

5.45^±0.2

5.45 ^±0.2

0.6^+0.2

Features

1. Gate

2. Drain

3. Source

Insulated package by fully molding

Super high speed switching

Low VF in turn on

J EDEC

EIAJ

Connection diagram

High reliability

ESAD39M-

Applications

High speed power switching

Maximum ratings and characteristics

Absolute maximum ratings

Rating

Symbol

VRRM

VRSM

Viso

Conditions

Item

Unit

-04

-06

400

600

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

Isolating voltage

400

600

1500

10*

Terminals-to-case, AC. 1min.

Square wave, duty=1/2, Tc=85°C

Sine wave 10ms

Average output current

Surge current

IFSM

-40 to +150

Operating junction temperature

Storage temperature

°C

Tstg

*Average forward current of centertap full wave connection

Electrical characteristics (Ta=25°C Unless otherwise specified )

Item

Symbol

VFM

Unit

Max.

2.5

Conditions

Forward voltage drop

Reverse current

IFM=4A

IRRM

µA

100

VR=VRRM

Reverse recovery time

Thermal resistance

t rr

IF=0.1A, IR=0.2A, Irec=0.05A

Junction to case

Rth(j-c)

°C/W

2.5

12 3

中文翻译

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