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ESAD39M-04D PDF预览

ESAD39M-04D

更新时间: 2024-11-21 20:10:51
品牌 Logo 应用领域
富士电机 - FUJI 快速恢复二极管局域网
页数 文件大小 规格书
3页 69K
描述
Rectifier Diode, 1 Phase, 2 Element, 10A, 400V V(RRM), Silicon, PLASTIC PACKAGE-3

ESAD39M-04D 技术参数

生命周期:Obsolete包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
其他特性:HIGH RELIABILITY应用:FAST RECOVERY
外壳连接:ISOLATED配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.5 VJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:50 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

ESAD39M-04D 数据手册

 浏览型号ESAD39M-04D的Datasheet PDF文件第2页浏览型号ESAD39M-04D的Datasheet PDF文件第3页 
ESAD39M(C,N,D) (10A) (400V to 600V / 10A)  
Outline drawings, mm  
FAST RECOVERY DIODE  
5.5±0.3  
15.5 ±0.3  
ø3.2 ±0.2  
3.2+0.3  
2.1±0.3  
1.6±0.3  
1.1+00.2.1  
3.5 ±0.2  
5.45±0.2  
5.45 ±0.2  
0.6+0.2  
Features  
Insulated package by fully molding  
Super high speed switching  
Low VF in turn on  
J EDEC  
EIAJ  
Connection diagram  
High reliability  
2
ESAD39M-  
ESAD39M-  
ESAD39M-  
C
1
3
3
Applications  
High speed power switching  
2
N
1
1
2
D
3
Maximum ratings and characteristics  
Absolute maximum ratings  
Rating  
Symbol  
VRRM  
VRSM  
Viso  
IO  
Conditions  
Item  
Unit  
-04  
-06  
400  
600  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
Isolating voltage  
V
V
400  
600  
1500  
10*  
50  
Terminals-to-case, AC. 1min.  
Square wave, duty=1/2, Tc=85°C  
Sine wave 10ms  
V
Average output current  
Surge current  
A
IFSM  
Tj  
A
-40 to +150  
-40 to +150  
Operating junction temperature  
Storage temperature  
°C  
°C  
Tstg  
*Average forward current of centertap full wave connection  
Electrical characteristics (Ta=25°C Unless otherwise specified )  
Item  
Symbol  
VFM  
Unit  
V
Max.  
2.5  
Conditions  
Forward voltage drop  
Reverse current  
IFM=4A  
IRRM  
µA  
100  
50  
VR=VRRM  
Reverse recovery time  
Thermal resistance  
t rr  
ns  
IF=0.1A, IR=0.2A, Irec=0.05A  
Junction to case  
Rth(j-c)  
°C/W  
2.5  

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