Datasheet > ESAC33MN

ESAC33MN

更新时间： 2024-09-22 12:55:31

品牌	Logo	应用领域
富士电机 - FUJI		二极管快恢复二极管快速恢复二极管
页数	文件大小	规格书
3页	71K
描述
FAST RECOVERY DIODE

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中文翻译

获取价格

数据手册

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ESAC33MN 数据手册

ESAC33M(C,N,D) (8A)

(200V / 8A)

Outline drawings, mm

FAST RECOVERY DIODE

4.5^Max.

2.0

10.5 ^Max.

6.0

+0.2

Ø3.2

-0.1

1.2

0.4

0.8

2.54

2.7

5.08

Features

Insulated package by fully molding

JEDEC

EIAJ

SC-67

High voltage by mesa design

High reliability

Connection diagram

ESAC33M-

Applications

High speed switching

Maximum ratings and characteristics

Absolute maximum ratings

Rating

-02

Item

Symbol

V^RRM

VRSM

Conditions

Unit

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

Average output current

Surge current

200

Square wave, duty=1/2, Tc=95°C

Sine wave 10ms

IFSM

Operating junction temperature

Storage temperature

-40 to +150

°C

Tstg

*Average forward current of centertap full wave connection

Electrical characteristics (Ta=25°C Unless otherwise specified )

Item

Symbol

VFM

Unit

Max.

1.4

Conditions

IFM=2.0A

Forward voltage drop

Reverse current

IRRM

µA

500

100

3.5

VR=VRRM

Reverse recovery time

Thermal resistance

t rr

IF=0.1A, IR=0.1A

Junction to case

Rth(j-c)

°C/W

12 3

中文翻译

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ESAC39-04N	FUJI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 5A, 400V V(RRM), Silicon, TO-220AB, SC-46, 3 PIN
ESAC39-06C	ETC	获取价格	FAST RECOVERY DIODE
ESAC39-06D	ETC	获取价格	FAST RECOVERY DIODE