ES3FB

更新时间： 2024-09-24 03:34:51

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
2页	148K
描述
Super Fast Surface Mount Rectifiers Reverse Voltage 50 to 1000 Volts Forward Current 3.0 Amperes

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中文翻译

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数据手册

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ES3FB 数据手册

ES3AB thru ES3MB

Super Fast Surface Mount Rectifiers

Reverse Voltage 50 to 1000 Volts Forward Current 3.0 Amperes

Features

Glass passivated chip

Super fast switching for high efficiency

For surface mounted applications

Low forward voltage drop and high current capability

Low reverse leakage current

Plastic material has UL flammability classification 94V-0

Mechanical Data

Case : Molded plastic

Polarity : Color band denote cathode

Weight : 0.003 ounce, 0.093 gram

Maximum Ratings and Electrical Characteristics

Ratings at 25^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

3AB

3BB

3CB

3DB

3FB

3GB

3JB

3KB

3MB

Parameter

Symbols

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

300

210

300

400

280

400

600

420

600

800

560

800

1000

700

Volts

Maximum DC blocking voltage

Maximum average forward

100

1000

3.0

Amps

@T_L=100^oC

(AV)

rectified current

Peak forward surge current

8.3ms single half sine-wave

superimposed on rated load (JEDEC Method)

I_FSM

100.0

Amps

Volts

Maximum forward voltage @ 3.0A DC

V_F

I_R

0.92

1.25

1.7

Maximum DC reverse current

at rated DC blocking voltage

@ T_J=25^oC

10.0

500

@ T_J=125^oC

Maximum reverse recovery time (Note 1)

Typical junction capacitance (Note 2)

t_rr

C_J

Typical thermal resistance (Note 3)

(Note 4)

R_θJL

R_θJA

^oC/W

Operating junction temperature range

Storage temperature range

T_J

-55 to +150

^oC

T_STG

Notes:

1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Thermal Resistance junction to Lead.

4. Thermal Resistance junction to Ambient.

247

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